Improvement of physical properties of MOS devices based on rare earth oxides
Source abstract
Abstract
We have successfully deposited a thin film of rare earth oxide on a Si substrate. After morphological characterization via a scanning electron microscope and an atomic force microscope, the electrical properties of the Al/Dy2O3/Si MOS structure were investigated using the current–voltage I(V) and capacitance–voltage C(V) measurements, as well as a study in the dynamic regime (AC) via conductance–frequency σ(f) measurements at different temperatures. Based on the classical Schottky model, we were able to determine some physical parameters, namely, the ideality factor and the potential barrier height. The effect of resistance and interface states on the current–voltage characteristics is observable and results in a deviation from the ideality factor. Then, dielectric data have been acquired by means of impedance spectroscopy over a wide frequency and temperature range. These results show that understanding the temperature dependence of the electrical characteristics of this structure may be of great help in improving the quality of Dy2O3 developed on a Si substrate for the future of device technology.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, College of Science, Jouf University 1 , P.O. Box 2014, Sakaka, Saudi Arabia
Laboratory of Energy and Materials (LR11ES34), Higher School of Science and Technology of Hammam, University of Sousse 2 , Street Lamine Abessi, 4011 Hammam Sousse, Tunisia
Department of Physics, College of Science and Arts, Ar-Rass, Qassim University 3 , Buraydah 51921, Saudi Arabia
Funding
Al Jouf University
References (45)
Show source-provided references
1. Lanthanide-doped nanocrystals: Synthesis, optical-magnetic properties, and applications10.1021/ar100129p ↗
2. Blue-emitting LaSi3N5:Ce3+ fine powder phosphor for UV-converting white light-emitting diodes10.1063/1.3193549 ↗
3. Thermo and photoluminescence properties of Eu3+ activated hexagonal, monoclinic and cubic gadolinium oxide nanorods10.1016/j.physb.2010.10.013 ↗
4. Synthesis and characterization of copper(II) complex nanoparticles ([Cu([18]py}2N4)]2+, [Cu([20]py}2N4)]2+, [Cu(Bzo2[18]py2N4)]2+, [Cu(Bzo2[20]py2N4)]2+) encapsulated within the zeolite-Y10.1080/15533174.2010.486969 ↗
5. Phase and luminescent intensity control of hydrophilic rare-earth up-converting nanophosphors prepared by one-pot solvothermal synthesis10.1016/j.jallcom.2011.03.122 ↗
6. Thermoluminescence response in gamma and UV irradiated Dy2O3 nanophosphor10.1016/j.materresbull.2012.03.043 ↗
7. The determination of interface states and series resistance profile of Al/polymer/PEDOT-PSS/ITO heterojunction diode by I–V and C–V methods10.1016/j.synthmet.2008.04.023 ↗
8. Electronic properties of Al/MoO3/p-InP enhanced Schottky barrier contacts10.1016/j.tsf.2016.08.019 ↗
9. Interfacial materials for organic solar cells: Recent advances and perspectives10.1002/advs.201500362 ↗
10. Role of interfacial layers in organic solar cells: Energy level pinning versus phase segregation10.1021/acsami.6b02712 ↗
11. Metal oxide semiconductor-based Schottky diodes: A review of recent advances10.1088/2053-1591/ab7a60 ↗
12. The temperature dependence on the electrical properties of dysprosium oxide deposited on p-Si substrate10.1016/j.mssp.2014.01.031 ↗
13. Electrical and carrier transport properties of Ti/α-amylase/p-InP MPS junction with a α-amylase polymer interlayer10.1007/s10854-021-05532-2 ↗
14. Effect of measurement frequency on admittance characteristics in Al/p-Si structures with interfacial native oxide layer10.32571/ijct.642886 ↗
15. Capacitance-voltage characteristics of Schottky barrier diode in the presence of deep-level impurities and series resistance10.1016/0169-4332(95)00020-8 ↗
16. Optical, morphological, and electrical properties of P3HT: SiNWs nanocomposite deposited on flexible substrate: Effect of SiNWs concentration10.1088/2053-1591/aa5fb9 ↗
17. 1988
18. 1981
19. Characterization, microstructural and electrical characterization of Pt Si nanowires Schottky diode grown by metal assisted chemical10.18576/ijtfst/060302 ↗
20. Electrical characterization of Au/ZnO/Si Schottky contact10.1088/1742-6596/439/1/012030 ↗
21. Schottky barrier and pn-junction I/V plots—Small signal evaluation10.1007/bf00615935 ↗
22. The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si Schottky diodes10.1016/j.apsusc.2005.03.122 ↗
23. Electron transport at metal-semiconductor interfaces: General theory10.1103/physrevb.45.13509 ↗
24. Schottky-barrier anomalies and interface states10.1063/1.1659716 ↗
25. Electron transport of inhomogeneous Schottky barriers10.1063/1.104747 ↗
26. Correlation between barrier height and interface structure of Ag/Si(111) Schottky diodes10.1016/0039-6028(94)00791-8 ↗
27. Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p+ (MOS) structures10.1088/0022-3727/41/21/215103 ↗
28. Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities10.1116/1.590839 ↗
29. Temperature dependence of I-V and C-V characteristics of Ni/n-CdF2 Schottky barrier type diodes10.1016/0038-1101(90)90003-W ↗
30. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing10.1063/1.126214 ↗
31. Electrical characteristics of high-κ dielectric film grown by direct sputtering method10.1016/j.sse.2005.11.010 ↗
32. Barrier inhomogeneities at Schottky contacts10.1063/1.347243 ↗
33. The ‘universal’ dielectric response10.1038/267673a0 ↗
34. Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33 Ga0.67 As10.1016/j.heliyon.2020.e04852 ↗
35. The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs10.1016/j.materresbull.2014.02.011 ↗
36. The physics and chemistry of the Schottky barrier height10.1063/1.4858400 ↗
37. 1987
38. Dielectric relaxation in solids10.1088/0022-3727/32/14/201 ↗
39. Characterization of electrical properties of Pb-modified BaSnO3 using impedance spectroscopy10.1016/j.matchemphys.2005.09.086 ↗
40. Complex impedance studies on a layered perovskite ceramic oxide—NaNdTiO410.1016/j.mseb.2004.08.009 ↗
41. Piezoelectric, impedance, electric modulus and AC conductivitystudies on (Bi0.5Na0.5)0.95Ba0.05TiO3 ceramic
42. Effect of copper substitution on electrical and magnetic properties of NiFe2O4 ferrite10.1016/j.matchemphys.2008.12.034 ↗
43. Dielectric properties and AC conductivity studies of novel NR/PVA full-interpenetrating polymer networks10.1016/j.jnoncrysol.2012.02.003 ↗
44. Impedance study of giant dielectric permittivity in BaFe0.5Nb0.5O3 perovskite ceramic10.1016/j.cap.2009.04.006 ↗
45. Impedance spectroscopy study of Na1/2Sm1/2TiO3 ceramic10.1007/s00339-007-3990-0 ↗