H-diamond MOS interface properties and FET characteristics with high-temperature ALD-grown HfO2 dielectric
Source abstract
Abstract
The performance of hydrogen-terminated diamond MOSFETs with a large gate–drain interspace (LGD) was analyzed on a polycrystalline diamond sample. A 300 °C atomic layer deposition grown (ALD-grown) HfO2 dielectric (28 nm) was used the gate dielectric and device passivation layer. The HfO2/H-diamond interfacial valence band offset of 1.98 eV was determined by x-ray photoelectron spectroscopy, indicating that the high temperature grown HfO2 dielectric has great potential for accommodating a high density of holes on the H-diamond surface, and the high dielectric constant of HfO2 is also useful for improving the control capability of the gate on the device channel. A breakdown voltage of 657 V was achieved on the device. Baliga’s figure of merit of the device was calculated to be ∼2.0 MW/cm2, which is comparable to that of the H-diamond FETs with Al2O3 dielectrics that are more than 200 nm thick. The HfO2 dielectric shows great potential for use in H-diamond power devices.
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Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Semiconductor materials and devices · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University 1 , Xi’an 710071, China
Xidian-Wuhu Research Institute 2 , Wuhu 241002, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · National Key Science and Technology Special Project · China Postdoctoral Science Foundation · Natural Science Basic Research Program of Shaanxi Province · Foundamental Research Funds for the Central Universities · Natural Science Basic Research Plan in Shaanxi Province of China · Open Fund of Key Laboratory of High Power Microwave · Wuhu and Xidian University Special Fund for Industry-University-Research Cooperation
References (32)
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