Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching
Source abstract
Abstract
NiO films grown on Pt and Nb:SrTiO3 (NSTO) substrates display filament-type and interface-type resistance switching (RS), respectively. The resistance retention studies show that these two different RSs also lead to distinct resistance evolutions. For Pt/NiO/Pt, both high and low resistance states have good retention property, demonstrating that the conducting filament is stable once it is formed. However, for Pt/NiO/NSTO/In, all resistance states show time-relaxation, and the relaxation trend depends on the polarity of the write bias. The resistive relaxation and nonvolatile features are attributed to the charge migration and electron trapping scenario, respectively.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Henan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University , Kaifeng 475004, People’s Republic of China
Funding
National Natural Science Foundation of China
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