Bilayer avalanche spin-diode logic
Source abstract
Abstract
A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Memory and Neural Computing · Neural Networks and Reservoir Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Univ. Paris-Sud, CNRS 1 Institut d’Electronique Fondamentale, , 91405 Orsay, France
Massachusetts Institute of Technology 2 Department of Materials Science, , Cambridge, MA 02139, USA
Northwestern University 3 Department of Electrical Engineering & Computer Science, , Evanston, IL 60208, USA
Northwestern University 4 Department of Materials Science & Engineering, , Evanston, IL 60208, USA
Northwestern University 5 Department of Biomedical Engineering, , Evanston, IL 60208, USA
References (28)
Show source-provided references
1. Appl. Phys. Lett. · 1990 · 56 · 66510.1063/1.102730 ↗
2. Science · 1998 · 282 · 166010.1126/science.282.5394.1660 ↗
3. Appl. Phys. Lett. · 2001 · 78 · 127310.1063/1.1348317 ↗
4. Rev. Mod. Phys. · 2004 · 76 · 32310.1103/RevModPhys.76.323 ↗
5. Appl. Phys. Lett. · 2004 · 85 · 143310.1063/1.1784042 ↗
6. Proc. IEEE · 2010 · 98 · 216910.1109/JPROC.2010.2066530 ↗
7. Proc. IEEE · 2010 · 98 · 212410.1109/JPROC.2010.2064272 ↗
8. Proc. IEEE · 2013 · 101 · 249810.1109/JPROC.2013.2252317 ↗
9. 1945
10. Nature · 2003 · 425 · 48510.1038/nature02014 ↗
11. Appl. Phys. Lett. · 2004 · 84 · 230710.1063/1.1689403 ↗
12. Appl. Phys. Lett. · 2004 · 84 · 8510.1063/1.1637954 ↗
13. Nature · 2007 · 447 · 57310.1038/nature05833 ↗
14. IEEE Electron Device Lett. · 2009 · 30 · 15810.1109/LED.2008.2009362 ↗
15. Nat. Nanotechnol. · 2010 · 5 · 26610.1038/nnano.2010.31 ↗
16. Nature · 2013 · 494 · 7210.1038/nature11817 ↗
17. Science · 2000 · 287 · 146610.1126/science.287.5457.1466 ↗
18. Appl. Phys. Lett. · 2002 · 80 · 129110.1063/1.1449536 ↗
19. Science · 2005 · 309 · 168810.1126/science.1108813 ↗
20. Appl. Phys. Lett. · 2006 · 88 · 07210510.1063/1.2174108 ↗
21. Appl. Phys. Lett. · 2008 · 92 · 02250510.1063/1.2834714 ↗
22. IEEE Trans. Nanotechnol. · 2012 · 11 · 102610.1109/TNANO.2012.2211892 ↗
23. 2013 · 88132J
24. 2012 · 209
25. 2013 · 88132E
26. Phys. Rev. B · 2009 · 79 · 20520910.1103/PhysRevB.79.205209 ↗
27. 2014 · 91671J
28. 2012