Electron transport through nano-MOSFET in presence of electron-electron interaction

We investigate the effect of electron-electron interaction on voltage distribution, charge distribution and current-voltage curve of two dimensional nano-MOSFETs with dimension equal to 1 × 1 nm2, 3 × 3 nm2, and 6 × 6 nm2 by using non-equilibrium Green function method. It is shown that the turn on voltage increases by decreasing the size of sample because of size quantization. Also we show that for a critical drain-source voltage a negative resistance is seen at current-voltage curve of 1 × 1 nm2 sample because of electron-electron interaction, and in consequence it can tolerate lower gate voltage in real practical applications.