Atmospheric He/O2 plasma jet fine etching with a scanning probe microscope
Source abstract
Abstract
In this study, we investigate a maskless fine etching technology using a He/O2 atmospheric pressure plasma jet (APPJ) assisted by a scanning probe microscope (SPM). The APPJ is localized in the submicrometer range by a nanopipette, which is also used as the probe of the SPM. We improve the rate of submicrometer-scale etching by adding O2 gas to the He source gas. The depth and full width at half maximum of a typical etched dot on a polymethylmethacrylate film were 475 nm and 235 nm, respectively. The etching rate was found to be six times faster with the added gas than without it. We also demonstrate line patterning; the width of the line was found to be 281 nm.
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Research context
OpenAlex topics: Plasma Applications and Diagnostics · Plasma Diagnostics and Applications · Surface Modification and Superhydrophobicity
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Affiliations
Graduate School of Integrated Science and Technology, Shizuoka University 1 , Johoku 3-5-1, Naka-ku, Hamamatsu 432-8561, Japan
Graduate School of Medical Photonics, Shizuoka University 2 , Johoku 3-5-1, Naka-ku, Hamamatsu 432-8011, Japan
Research Institute of Electronics, Shizuoka University 3 , Johoku 3-5-1, Naka-ku, Hamamatsu 432-8011, Japan
Funding
Japan Society for the Promotion of Science
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