Nanometric Resolved Luminescence in h-BN Flakes: Excitons and Stacking Order
Source abstract
Abstract
High Resolution Image Download MS PowerPoint Slide The strong excitonic emission of hexagonal boron nitride (h-BN) makes this material one of the most promising candidate for light emitting devices in the far ultraviolet (UV). However, single excitons occur only in perfect monocrystals that are extremely hard to synthesize, while regular h-BN samples present a complex emission spectrum with several additional peaks. The microscopic origin of these additional emissions has not yet been understood. In this work we address this problem using an experimental and theoretical approach that combines nanometric resolved cathodoluminescence, high resolution transmission electron microscopy and state of the art theoretical spectroscopy methods. We demonstrate that emission spectra are strongly inhomogeneus within individual few layer flakes and that additional excitons occur at structural deformations, such as faceted plane folds, that lead to local changes of the h-BN layers stacking order.
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Research context
OpenAlex topics: 2D Materials and Applications · GaN-based semiconductor devices and materials · Boron and Carbon Nanomaterials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratoire de Physique des Solides, Université Paris-Sud, CNRS UMR 8502, F-91405, Orsay, France
Laboratoire des Solides Irradiés, Ecole Polytechnique, Palaiseau and European Theoretical Spectroscopy Facility (ETSF), Route de Saclay, F-91128 Palaiseau, France
Institut d’Electronique Fondamentale, Université Paris-Sud, CNRS, 91405 Orsay, France
Department of Chemistry, University of Surrey, Guildford GU2 7XH, United Kingdom
Funding
Agence Nationale de la Recherche · European Commission · Triangle de la Physique
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