Reflectance of a reflective photonic crystal p-contact layer for improving the light-extraction efficiency of AlGaN-based deep-ultraviolet light-emitting diodes

We utilized the finite-difference time-domain method (FDTD) to investigate the reflectance of an air void photonic crystal (PhC) on the p-electrode of an AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED). Firstly, a transparent p-AlGaN layer with cylindrical air voids on a Ni(1nm)/Al(140nm) metal electrode was optimized to maximize the reflectance at normal incidence. It was shown that by having the optimum AlGaN PhC on the metal electrode, the reflectance as a function of the angle of incidence was advantageously redistributed to increase LEE. The calculated angle-dependent reflectances were converted to average reflectance considering the power distribution of dipole sources in the TE and TM modes. The average reflectances of a reference structure and the PhC structure for the TM mode at wavelengths around 283 nm were 77.1 and 85.2%, respectively. Thus, an incremental increase of 8% in average reflectance for the TM mode was obtained by adopting the optimized PhC. Secondly, we investigated a PhC with air voids in two different layers, a p-GaN layer and a p-AlGaN layer on the Ni/Al. The calculated average reflectances at 283 nm were 38% and 42% for the TE and TM modes, respectively, when the thickness of the p-GaN layer was 70 nm. The average reflectances for the TE and TM modes with a uniform 70nm thick p-GaN layer without a PhC were 4.2 and 3.6%, respectively. This clearly shows that the optimized PhC can reduce light absorption in both the p-GaN layer and the metal electrode.