Secondary electron emission characteristics of oxide electrodes in flat electron emission lamp
Source abstract
Abstract
The present study concerns with the secondary electron emission coefficient, γ, of the cathode materials used in the newly developed flat electron emission lamp (FEEL) devices, which essentially integrates the concept of using cathode for fluorescent lamp and anode for cathode ray tube (CRT) to obtain uniform planar lighting. Three different cathode materials, namely fluorine-doped tin oxide (FTO), aluminum oxide coated FTO (Al2O3/FTO) and magnesium oxide coated FTO (MgO/FTO) were prepared to investigate how the variations of γ and working gases influence the performance of FEEL devices, especially in lowering the breakdown voltage and pressure of the working gases. The results indicate that the MgO/FTO bilayer cathode exhibited a relatively larger effective secondary electron emission coefficient, resulting in significant reduction of breakdown voltage to about 3kV and allowing the device to be operated at the lower pressure to generate the higher lighting efficiency.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Plasma Diagnostics and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Industrial Technology Research Institute 1 Green Energy and Environment Research Laboratories, , 195, Sec. 4, Chung Hsing Road, Chutung 310, Taiwan
National Chiao Tung University 2 Department of Electrophysics, , 1001 Ta Hsueh Road, Hsinchu 300, Taiwan
Chung Yuan Christian University 3 Department of Electronic Engineering, , 200 Chung Pei Road, Chung Li 320, Taiwan
Funding
Bureau of Energy, Ministry of Economic Affairs, Republic of Taiwan · Ministry of Science and Technology, Taiwan
References (27)
Show source-provided references
1. Appl. Phys. Lett. · 2008 · 94 · 09150110.1063/1.3093802 ↗
2. Nanotechnology · 2008 · 19 · 23530610.1088/0957-4484/19/23/235306 ↗
3. IEEE Trans. Plasma Sci. · 2006 · 34 · 26810.1109/TPS.2006.872440 ↗
4. Appl. Phys. Lett. · 1999 · 94 · 312910.1063/1.125253 ↗
5. Mater. Chem. Phys. · 1995 · 40 · 26710.1016/0254-0584(95)01492-6 ↗
6. Yamamoto · 2012 · 30510.5772/1989 ↗
7. Opt. Express · 2011 · 19 · A5110.1364/OE.19.000A51 ↗
8. J. Appl. Phys. · 1976 · 47 · 133710.1063/1.322837 ↗
9. 1999 · 55210.1889/1.1834081 ↗
10. Appl. Phys. Lett. · 2002 · 80 · 73710.1063/1.1445470 ↗
11. IEEE Trans. Electron Dev. · 1976 · 23 · 121110.1109/T-ED.1976.18581 ↗
12. Appl. Phys. Lett. · 2001 · 78 · 59210.1063/1.1343492 ↗
13. IEEE Trans. Electron Dev. · 1976 · 23 · 31310.1109/T-ED.1976.18397 ↗
14. IEEE Trans. Electron Dev. · 1978 · 25 · 6010.1109/T-ED.1978.19033 ↗
15. J. Appl. Phys. · 2003 · 94 · 76410.1063/1.1581376 ↗
16. IEEE Trans. Electron Dev. · 1975 · 22 · 68510.1109/T-ED.1975.18204 ↗
17. Surf. Coatings Technol. · 1996 · 86-87 · 65710.1016/S0257-8972(96)03075-7 ↗
18. Thin Solid Films · 1995 · 270 · 23010.1016/0040-6090(95)06917-8 ↗
19. Physica (Amsterdam) · 1940 · 7 · 51910.1016/S0031-8914(40)90043-X ↗
20. 1995 · 275
21. 1965 · 222
22. Phys. Rev. · 1954 · 96 · 1010.1103/PhysRev.96.10 ↗
23. 1965 · 193
24. J. Phys. D: Appl. Phys. · 2002 · 35 · R9110.1088/0022-3727/35/10/201 ↗
25. Appl. Phys. Lett. · 2002 · 80 · 221610.1063/1.1464229 ↗
26. J. Appl. Phys. · 1978 · 49 · 347610.1063/1.325257 ↗
27. Jpn. J. Appl. Phys. · 2004 · 43 · L115410.1143/JJAP.43.L1154 ↗