GeTe ultrathin film based phase-change memory with extreme thermal stability, fast SET speed, and low RESET power energy
Abstract
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials
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Affiliations
Laboratory of Infrared Material and Devices & Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Advanced Technology Research Institute, Ningbo University 1 , Ningbo 315211, China
Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University 2 , Ningbo 315211, China
Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo University 3 , Ningbo 315211, China
College of Materials Science and Engineering, Shenzhen University 4 , Shenzhen 518060, China
Funding
National Natural Science Foundation of China · Key R&D Program of Zheiiang Province · “Pioneer” and “Leading Goose” R&D Program of Zhejiang · Zhejiang Provincial Natural Science Foundation of China · Fundamental Research Funds for the Provincial Universities of Zhejiang · K. C. Wong Magna Fund in Ningbo University, China