Tuning the tunneling magnetoresistance by using fluorinated graphene in graphene based magnetic junctions
Source abstract
Abstract
Spin polarized properties of fluorinated graphene as tunnel barrier with CrO2 as two HMF electrodes are studied using first principle methods based on density functional theory. Fluorinated graphene with different fluorine coverages is explored as tunnel barriers in magnetic tunnel junctions. Density functional computation for different fluorine coverages imply that with increase in fluorine coverages, there is increase in band gap (Eg) of graphene, Eg ∼ 3.466 e V was observed when graphene sheet is fluorine adsorbed on both-side with 100% coverage (CF). The results of CF graphene are compared with C4F (fluorination on one-side of graphene sheet with 25% coverage) and out-of-plane graphene based magnetic tunnel junctions. On comparison of the results it is observed that CF graphene based structure offers high TMR ∼100%, and the transport of carrier is through tunneling as there are no transmission states near Fermi level. This suggests that graphene sheet with both-side fluorination with 100% coverages acts as a perfect insulator and hence a better barrier to the carriers which is due to negligible spin down current (I↓) in both Parallel Configuration (PC) and Antiparallel Configuration (APC).
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Quantum and electron transport phenomena · Advancements in Battery Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Institute of Technology , Kurukshetra, India 136119
References (56)
Show source-provided references
1. Spintronics: A Challenge for materials science and solid-state chemistry10.1002/anie.200601815 ↗
2. Origin, development, and future of spintronics (Nobel Lecture)10.1002/anie.200801093 ↗
3. Spin-dependent tunneling in magnetic tunnel junctions10.1088/0953-8984/15/4/201 ↗
4. Tunnel field-effect transistors as energy-efficient electronic switches10.1038/nature10679 ↗
5. Spin-based logic in semiconductors for reconfigurable large-scale circuits10.1038/nature05833 ↗
6. Spintronics: Fundamentals and applications10.1103/revmodphys.76.323 ↗
7. Two-dimensional atomic crystals10.1073/pnas.0502848102 ↗
8. Graphene-based magnetic tunnel junctions10.1021/nl3007616 ↗
9. Low-resistance spin injection into silicon using graphene tunnel barriers10.1038/nnano.2012.161 ↗
10. Field-effect tunneling transistor based on vertical graphene heterostructures10.1126/science.1218461 ↗
11. Electrical spin injection into graphene through monolayer hexagonal boron nitride
12. Electronic spin transport and spin precession in single graphene layers at room temperature10.1038/nature06037 ↗
13. Tunneling spin injection into single layer graphene10.1103/physrevlett.105.167202 ↗
14. Highly efficient spin transport in epitaxial graphene on SiC10.1038/nphys2331 ↗
15. Nanospintronics based on magnetologic gates10.1109/ted.2011.2173498 ↗
16. The rise of graphene10.1038/nmat1849 ↗
17. xh/π (x = c, si) interactions in graphene and silicene: Weak in strength, strong in tuning band structures
18. First-principles study of the interaction and charge transfer between graphene and metals10.1103/physrevb.79.195425 ↗
19. Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect10.1103/physrevlett.99.216802 ↗
20. Band structure engineering of graphene by strain: First-principles calculations10.1103/physrevb.78.075435 ↗
21. Strain engineering of graphene’s electronic structure10.1103/physrevlett.103.046801 ↗
22. Chemically derived, ultrasmooth graphene nanoribbon semiconductors10.1126/science.1150878 ↗
23. Electronic structure and stability of semiconducting graphene nanoribbons10.1021/nl0617033 ↗
24. Energy band-gap engineering of graphene nanoribbons10.1103/physrevlett.98.206805 ↗
25. Graphene-related nanomaterials: Tuning properties by functionalization10.1039/c3nr33218g ↗
26. Control of graphene’s properties by reversible hydrogenation: Evidence for graphane10.1126/science.1167130 ↗
27. Reversible fluorination of graphene: Evidence of a two-dimensional wide bandgap semiconductor10.1103/physrevb.81.205435 ↗
28. Electron properties of fluorinated single-layer graphene transistors10.1103/physrevb.82.073403 ↗
29. Fluorographene: A two-dimensional counterpart of teflon10.1002/smll.201001555 ↗
30. Properties of fluorinated graphene films10.1021/nl101437p ↗
31. Fluorographene: A wide bandgap semiconductor with ultraviolet luminescence10.1021/nn1025274 ↗
32. Structural and electronic properties of fluographene10.1002/smll.201002058 ↗
33. First-principles investigation of graphene fluoride and graphane10.1103/physrevb.82.195436 ↗
34. The ultimate diamond slab: Graphane versus graphene10.1016/j.diamond.2010.01.007 ↗
35. Enhanced spin–orbit coupling in hydrogenated and fluorinated graphene10.1016/j.carbon.2009.12.031 ↗
36. Patterning nanoroads and quantum dots on fluorinated graphene10.1007/s12274-010-0084-7 ↗
37. Half-metallic ferromagnets: From band structure to many-body effects10.1103/revmodphys.80.315 ↗
38. Half metallic ferromagnets10.1088/0953-8984/19/31/310301 ↗
39. Half-metallicity in single-layered manganese dioxide nanosheets by defect engineering10.1002/anie.201410031 ↗
40. Near-complete spin polarization in atomically-smooth chromium-dioxide epitaxial films prepared using a CVD liquid precursor10.1103/physrevb.64.180408 ↗
41. The non-equilibrium Green’s function (NEGF) formalism: An elementary introduction
42. Nanoscale device modeling: The Green’s function method10.1006/spmi.2000.0920 ↗
43. Density-functional method for nonequilibrium electron transport10.1103/physrevb.65.165401 ↗
44. The SIESTA method for ab initio order-N materials simulation10.1088/0953-8984/14/11/302 ↗
45. Tuning electronic structure of graphene: A first-principles study10.1109/tnano.2011.2182358 ↗
46. Electronic transport properties of in-plane heterostructures constructed by MoS2 and WS2 nanoribbons10.1039/c5ra14507d ↗
47. Multi-functional nano-electronics constructed using boron phosphide and silicon carbide nanoribbons
48. First principle simulations of various magnetic tunnel junctions applications in magnetoresistive random access memories10.1109/tnano.2013.2274902 ↗
49. Theoretical study on the effect of dopant positions and dopant density on transport properties of a BN co-doped SiC nanotube10.1016/j.physleta.2012.12.007 ↗
50. Theoretical study on transport properties of a BN co-doped SiC nanotube10.1016/j.physleta.2011.08.001 ↗
51. Theoretical study on the effect of vacancy defect reconstruction on electron transport in Si-C nanotubes10.1142/s0217984911027388 ↗
52. Spin transport in carbon nanotubes bundles: An ab-initio study
53. Graphene-based spin caloritronics10.1021/nl2000049 ↗
54. Spin-dependent transport in Fe-doped carbon nanotubes10.1103/physrevb.75.235415 ↗
55. Enhancing TMR and spin-filtration by using out-of-plane graphene insulating barrier in MTJs10.1039/c7cp03342g ↗
56. First-principles study of transport of V doped boron nitride nanotube10.1016/j.physleta.2008.06.060 ↗