Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol
Source abstract
Abstract
The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM). The properties of ODT SAM on (100) GaSb were characterized by the atomic force microscopy using Kelvin probe force microscopy mode and X-ray photoelectron spectroscopy. The chemical treatment of 10mM ODT-C2H5OH has been applied to the passivation of a type-II superlattice InAs/GaSb photodetector. The electrical measurements indicate that the current density was reduced by one order of magnitude as compared to an unpassivated photodetector.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Molecular Junctions and Nanostructures · Nanowire Synthesis and Applications
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Affiliations
Institute of Electron Technology 1 , Al. Lotnikow 32/46, 02-668 Warsaw, Poland
University of Warsaw 2 , Biological and Chemical Research Centre, Al. Zwirki i Wigury 101, 02-089 Warsaw, Poland
University of Silesia 3 A. Chełkowski Institute of Physics, , ul. Uniwersytecka 4, 40-007 Katowice, Poland
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