journal article·2014-05-01Open access

Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

Minggang Xia, Zhaofang Cheng, Jinyun Han, Minrui Zheng, Chorng-Haur Sow, John T. L. Thong, Shengli Zhang, Baowen Li

AIP Advances· Volume 4· Issue 5

Abstract

The electrical and thermal conductivities are measured for individual zinc oxide (ZnO) nanowires with and without gallium ion (Ga+) implantation at room temperature. Our results show that Ga+ implantation enhances electrical conductivity by one order of magnitude from 1.01 × 103 Ω−1m−1 to 1.46 × 104 Ω−1m−1 and reduces its thermal conductivity by one order of magnitude from 12.7 Wm−1K−1 to 1.22 Wm−1K−1 for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga+ implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga+ point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga+-implantation may be a more effective method than diameter reduction in improving thermoelectric performance.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · ZnO doping and properties · Thermal properties of materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Xi'an Jiaotong University 1 Laboratory of Nanostructure and its Physics Properties, Department of Optical Information Science and Technology, Department of Applied Physics, and MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science, , 710049 China

National University of Singapore 2 Department of Physics and Centre for Computational Science and Engineering, , Singapore 117542, Singapore

National University of Singapore 3 Department of Electrical and Computer Engineering, , 4 Engineering Drive 3, Singapore 117576, Singapore

National University of Singapore 4 National University of Singapore Nanoscience and Nanotechnology Initiative, , Singapore 117542, Singapore

Tongji University 5 Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, , Shanghai 200092, People's Republic of China

Funding

NSFC

References (53)

Show source-provided references
1. Adv. Mater. · 2007 · 19 · 88910.1002/adma.200602918 ↗
2. J. Phys. Chem. B · 2005 · 109 · 910.1021/jp0452599 ↗
3. Adv. Mater. · 2005 · 17 · 139310.1002/adma.200401732 ↗
4. Nano Lett. · 2006 · 6 · 276810.1021/nl061802g ↗
5. Nano Lett. · 2008 · 8 · 397310.1021/nl802497e ↗
6. Science · 2006 · 312 · 24210.1126/science.1124005 ↗
7. Science · 2007 · 316 · 10210.1126/science.1139366 ↗
8. Nano Lett. · 2008 · 8 · 303510.1021/nl802367t ↗
9. Appl. Phys. Lett. · 1998 · 72 · 327010.1063/1.121620 ↗
10. Nat. Mater. · 2005 · 4 · 4210.1038/nmat1284 ↗
11. Science · 2001 · 292 · 189710.1126/science.1060367 ↗
13. Nano. Lett. · 2004 · 4 · 19710.1021/nl034780w ↗
14. Appl. Phys. Lett. · 2009 · 94 · 02210610.1063/1.3067868 ↗
15. Appl. Phys. Lett. · 2006 · 88 · 14192110.1063/1.2193794 ↗
16. Nanotechnology · 2007 · 18 · 43570610.1088/0957-4484/18/43/435706 ↗
17. Small · 2012 · 8 · 73810.1002/smll.201102046 ↗
18. Nature · 2008 · 451 · 16310.1038/nature06381 ↗
19. Nature · 2008 · 451 · 16810.1038/nature06458 ↗
20. Nature · 2001 · 413 · 59710.1038/35098012 ↗
21. Adv. Mater. · 2007 · 19 · 104310.1002/adma.200600527 ↗
22. Appl. Phys. Lett. · 2007 · 91 · 13211010.1063/1.2791006 ↗
23. J. Appl. Phys. · 2009 · 105 · 10352110.1063/1.3132865 ↗
24. 2001
25. Phys. Rev. Lett. · 2001 · 87 · 21550210.1103/PhysRevLett.87.215502 ↗
26. J. Heat Trans. · 2003 · 125 · 88110.1115/1.1597619 ↗
27. 1986
28. Solid Stat. Elec. · 2002 · 46 · 166510.1016/S0038-1101(02)00176-4 ↗
29. J. Appl. Phys. · 2011 · 109 · 12130110.1063/1.3581173 ↗
30. Nanoscale · 2012 · 4 · 339910.1039/c2nr30688c ↗
31. Optical Mat. · 2013 · 35 · 50910.1016/j.optmat.2012.10.022 ↗
32. Rev. Sci. Instrum. · 1990 · 61 · 80210.1063/1.1141498 ↗
33. Rev. Sci. Instrum. · 2001 · 72 · 299610.1063/1.1378340 ↗
34. Rev. Sci. Instrum. · 1995 · 66 · 111510.1063/1.1145989 ↗
35. Phys. Rev. B · 2006 · 74 · 13410910.1103/PhysRevB.74.134109 ↗
36. Appl. Phys. Lett. · 2008 · 92 · 06310110.1063/1.2839572 ↗
37. Appl. Phys. Lett. · 2009 · 95 · 07311710.1063/1.3212737 ↗
38. 1990 · 99
39. 1988
40. Seitz · 1958 · 1
41. Phys. Rev. · 1964 · 136 · A114910.1103/PhysRev.136.A1149 ↗
42. J. Appl. Phys. · 1991 · 69 · 33110.1063/1.347717 ↗
43. Phys. Rev. Lett. · 2008 · 101 · 10550110.1103/PhysRevLett.101.105501 ↗
44. Phys. Rev. · 1964 · 134 · A105810.1103/PhysRev.134.A1058 ↗
45. Phys. Rev. B · 2003 · 68 · 11330810.1103/PhysRevB.68.113308 ↗
46. Phys. Rev. Lett. · 2009 · 102 · 12550310.1103/PhysRevLett.102.125503 ↗
47. Solid State Commun. · 1970 · 8 · 18710.1016/0038-1098(70)90077-3 ↗
48. Solid State Commun. · 1974 · 15 · 111110.1016/0038-1098(74)90543-2 ↗
49. Phys. Status Solidi B · 2003 · 235 · 26010.1002/pssb.200301566 ↗
50. J. Appl. Phys. · 1966 · 37 · 265910.1063/1.1782100 ↗
51. Phys. Rev. B · 2002 · 65 · 09210110.1103/PhysRevB.65.092101 ↗
52. Phys. Rev. B · 2004 · 69 · 09430610.1103/PhysRevB.69.094306 ↗
53. J. Elec. Mater. · 2009 · 38 · 123410.1007/s11664-009-0816-1 ↗