Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate
Source abstract
Abstract
Si and C emission into the oxide layer during the oxidation of silicon carbide and SiO2 growth on the oxide surface were experimentally confirmed from depth profiles of oxidized HfO2/SiC structures. With longer oxidation times, surface SiO2 growth transitioned to oxide/SiC interface growth. The influence of Si and C emission on the oxidation rate was investigated by real-time measurements of the oxide growth rate. Experimental observations of annealing-inserted oxidation and two-temperature oxidation indicated that the emission suppressed the oxidation rate.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Saitama University Division of Mathematics Electronics and Information Sciences, Graduate School of Science and Engineering, , 255 Shimo-Okubo, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
Funding
Japan Society for the Promotion of Science
References (29)
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