Comparative study of the ion-slicing mechanism of Y-cut LiNbO3
Source abstract
Abstract
Ion-cutting of piezoelectric LiNbO3 (LN) thin film provides a material platform for the design and fabrication of novel integrated photonics and RF MEMS devices. In this paper, the ion-slicing mechanisms of He-implanted LN with different orientations are investigated. The anisotropy of film exfoliation is observed on LN wafers with different orientations. The Z-cut LN shows regular surface blistering and “plate-like” exfoliation, while the Y-cut LN shows the unique “rolled-up” exfoliation. Two types of defect, i.e. the pressure-related plateau defect and the stress-related crack defect, are observed to contribute to the film exfoliation. Moreover, the defect evolution in H-implanted LN is investigated. In comparison with the He-implanted LN, implanted H ions are mainly trapped by O-H bond and the implantation-induced strain is not strong enough, which are inadequate to form the continuous crack. Therefore the H ions are not favorable for the mass production of LNOI substrates.
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Research context
OpenAlex topics: Acoustic Wave Resonator Technologies · Photorefractive and Nonlinear Optics · Advanced Fiber Optic Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050, China
Beijing Zhongkexin Electronics Equipment Co., Ltd 2 , Beijing 101111, China
Shanghai Kingstone Semiconductor Joint Stock Co., Ltd 3 , Shanghai 201399, China
Funding
Chinese-Austrian Cooperative R&D Project · National Key R&D Program of China · National Natural Science Foundation of China · One Hundred Talent Program of CAS · Shanghai Sailing Program · Shanghai Science and Technology Innovation Action Plan Program
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Show source-provided references
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