Comparative study of Ar-implanted Ti-Zr-V non-evaporable getter films on the Al-alloy substrate

Original and Ar-implanted Ti-Zr-V non-evaporable getter (NEG) films were characterized using scanning electron microscope, X-ray diffractometer, electron spectroscopy for chemical analysis, and transmission electron microscopy. Similar properties and results were observed in the surface morphology, the composition, and the crystalline structure for original and implanted Ti-Zr-V films. However, the thermal activation temperature were increased for implanted films. The analysis of implanted Ti-Zr-V films revealed that defects formed in the upper layers of the films can trap diffused gaseous atoms from the surface into the Ti-Zr-V films. Therefore, the thermal activation reaction of Ti-Zr-V films would be affected due to implantation-induced defects in the films. We show directly that the thermal activation reaction of Ti-Zr-V films are changed by the existence of defects in the getter films.