Oscillation of electron mobility in parabolic double quantum well structure due to applied electric field

We show that oscillation of low temperature electron mobility μ can be obtained by applying an electric field F along the growth direction of the asymmetrically barrier delta doped AlxGa1-xAs parabolic double quantum well structure. The drastic changes in the subband Fermi energies and distributions of subband wave functions as a function of F yield nonmonotonic intra- and intersubband scattering rate matrix elements mediated by intersubband effects. The oscillatory enhancement of μ, which is attributed to the subband mobilities governed by the ionized impurity scattering, magnifies with increase in well width and decrease in height of the parabolic structure potential. The results can be utilized for nanoscale low temperature device applications.