The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si
Source abstract
Abstract
The reaction between gallium (Ga) and silicon (Si), termed melt-back etching, greatly deteriorates the quality of GaN grown on a Si substrate. In this paper, the mechanism of melt-back etching was investigated layer-by-layer in a GaN/AlN/Si system. It is found that the environment of the reactor plays a critical role in melt-back etching, which may happen as early as during the baking process. Drawing on experimental evidence and analyses, a two-step melt-back etching model is proposed. Finally, optimized pretreatments including an AlN precoating process and reduction in baking temperature were used to successfully solve the etching problem and verify the model.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Science 1 , Beijing 100083, China
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences 2 , Beijing 100049, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 3 , Beijing 100049, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Strategic Priority Research Program of Chinese Academy of Sciences · Youth Innovation Promotion Association · Beijing Nova Program · Young Elite Scientists Sponsorship Program by CAST
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