Tunneling magnetoresistance sensors with different coupled free layers
Source abstract
Abstract
Large differences of magnetic coercivity (HC), exchange coupling field (HE), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interfacial barrier layer but also affected largely by the magnetic or non-magnetic coupled free layers. All these parameters are sensitively controlled by the magnetic nanostructure, which can be tuned also by the magnetic annealing process. The optimized sensors exhibit a large field sensitivity of up to 261%/mT in the region of the reversal synthetic ferrimagnet at the pinned layers.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Physics of Superconductivity and Magnetism · Magnetic and transport properties of perovskites and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Nebraska-Lincoln 1 Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, , Lincoln, Nebraska 68588, USA
Department of Energy’s National Security Campus 2 , Kansas City, Missouri 64147, USA
Department of Energy’s National Security Campus 3 , Albuquerque, New Mexico 87106, USA
Funding
Honeywell Federal Manufacturing & Technogies · U.S. Department of Defense · Division of Electrical, Communications and Cyber Systems
References (33)
Show source-provided references
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