Experimentally investigating the degradations of small-signal gain for a GaN class-AB dual-band power amplifier under high temperature and humidity conditions
Source abstract
Abstract
In order to get the high temperature and humidity characteristics of key specifications for a power amplifier (PA), the degradation of the small-signal gain for a GaN class-AB dual-band PA under different temperature and humidity conditions is investigated experimentally. The experimental results show that the small-signal gain of the GaN class-AB dual-band PA will decrease under high temperature and humidity conditions. The main reasons for this degradation are discussed and analyzed in this paper.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Radio Frequency Integrated Circuit Design · Advanced Power Amplifier Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Microelectronics, Tianjin University , Tianjin 300072, China
Funding
National Key R&D Program of China · Aoshan Talents Outstanding Scientist Program
References (24)
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