journal article·2017-02-01Open access

Coexistence of two types of metal filaments in oxide memristors

D. Xu, X. N. Shangguan, S. M. Wang, H. T. Cao, L. Y. Liang, H. L. Zhang, J. H. Gao, W. M. Long, J. R. Wang, F. Zhuge

AIP Advances· Volume 7· Issue 2

Abstract

One generally considers the conducting filament in ZnO-based valence change memristors (VCMs) as an aggregation of oxygen vacancies. Recently, the transmission electron microscopy observation showed the filament is composed of a Zn-dominated ZnOx. In this study, careful analysis of the temperature dependence of the ON state resistance demonstrates that the formation/rupture of a Zn filament is responsible for the resistive switching in ZnO VCMs. Cu/ZnO/Pt memristive devices can be operated in both VCM and ECM (electrochemical metallization memristor) modes by forming different metal filaments including Cu, Zn and a coexistence of these two filaments. The device operation can be reversibly switched between ECM and VCM modes. The dual mode operation capability of Cu/ZnO/Pt provides a wide choice of select devices for constructing memristive crossbar architectures.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Jiangsu University 1 School of Materials Science and Engineering, , Zhenjiang 212013, China

Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences 2 Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, , Ningbo 315201, China

Ningbo University of Technology 3 School of Electronic and Information Engineering, , Ningbo 315211, China

Zhengzhou Research Institute of Mechanical Engineering 4 , Zhengzhou 450001, China

Funding

Program for Ningbo Municipal Science and Technology Innovative Research Team · National Natural Science Foundation of China · Natural Science Foundation of Zhejiang Province

References (29)

Show source-provided references
1. Nat. Mater. · 2007 · 6 · 83310.1038/nmat2023 ↗
2. Mater. Sci. Eng. R · 2014 · 83 · 110.1016/j.mser.2014.06.002 ↗
3. Nat. Nanotech. · 2016 · 11 · 6710.1038/nnano.2015.221 ↗
4. Sci. Rep. · 2013 · 3 · 292910.1038/srep02929 ↗
5. 10.1002/adma.20160329310.1002/adma.201603293 ↗
6. Adv. Funct. Mater. · 2014 · 24 · 567910.1002/adfm.201401304 ↗
7. Nat. Commun. · 2014 · 5 · 423210.1038/ncomms5232 ↗
8. Appl. Phys. Lett. · 2015 · 106 · 08310410.1063/1.4913588 ↗
9. Nano Lett. · 2014 · 14 · 240110.1021/nl500049g ↗
10. Nanoscale · 2015 · 7 · 64210.1039/C4NR04394D ↗
11. Nano Lett. · 2009 · 9 · 147610.1021/nl803387q ↗
12. IEEE Electron Device Lett. · 2011 · 32 · 157010.1109/LED.2011.2163613 ↗
13. Chem. Mater. · 2015 · 27 · 597410.1021/acs.chemmater.5b02041 ↗
14. Nat. Nanotech. · 2010 · 5 · 14810.1038/nnano.2009.456 ↗
15. Nat. Nanotech. · 2013 · 8 · 1310.1038/nnano.2012.240 ↗
16. Nat. Commun. · 2013 · 4 · 238210.1038/ncomms3382 ↗
17. ACS Nano · 2016 · 10 · 148110.1021/acsnano.5b07020 ↗
18. Sci. Rep. · 2015 · 5 · 1405310.1038/srep14053 ↗
19. Appl. Phys. Lett. · 2008 · 92 · 23211210.1063/1.2945278 ↗
20. Adv. Mater. · 2012 · 24 · 351510.1002/adma.201201595 ↗
21. Nano Lett. · 2013 · 13 · 367110.1021/nl4015638 ↗
22. Appl. Phys. Lett. · 2016 · 108 · 01350410.1063/1.4939436 ↗
23. Nanotechnology · 2011 · 22 · 27520410.1088/0957-4484/22/27/275204 ↗
24. Appl. Phys. Lett. · 2005 · 87 · 09210310.1063/1.2012521 ↗
25. Appl. Phys. Lett. · 2012 · 100 · 07210110.1063/1.3683523 ↗
26. Appl. Phys. Lett. · 2007 · 91 · 09211010.1063/1.2777170 ↗
27. Appl. Phys. Lett. · 2010 · 96 · 16350510.1063/1.3406121 ↗
28. AIP Adv. · 2015 · 5 · 05712510.1063/1.4921089 ↗
29. Nat. Mater. · 2010 · 9 · 40310.1038/nmat2748 ↗