Across-plane thermal characterization of films based on amplitude-frequency profile in photothermal technique

This work develops an amplitude method for the photothermal (PT) technique to analyze the amplitude of the thermal radiation signal from the surface of a multilayered film sample. The thermal conductivity of any individual layer in the sample can be thereby determined. Chemical vapor deposited SiC film samples (sample 1 to 3: 2.5 to 3.5 μm thickness) with different ratios of Si to C and thermally oxidized SiO2 film (500 nm thickness) on silicon substrates are studied using the amplitude method. The determined thermal conductivity based on the amplitude method is 3.58, 3.59, and 2.59 W/m⋅K for sample 1 to 3 with ±10% uncertainty. These results are verified by the phase shift method, and sound agreement is obtained. The measured thermal conductivity (k) of SiC is much lower than the value of bulk SiC. The large k reduction is caused by the structure difference revealed by Raman spectroscopy. For the SiO2 film, the thermal conductivity is measured to be 1.68 ± 0.17 W/m⋅K, a little higher than that obtained by the phase shift method: 1.31 ± 0.06 W/m⋅K. Sensitivity analysis of thermal conductivity and interfacial resistance is conducted for the amplitude method. Its weak-sensitivity to the thermal contact resistance, enables the amplitude method to determine the thermal conductivity of a film sample with little effect from the interface thermal resistance between the film and substrate. The normalized amplitude ratio at a high frequency to that at a low frequency provides a reliable way to evaluate the effusivity ratio of the film to that of the substrate.