Ultraviolet photoelectrochemical photodetector based on GaN/Cu2O core–shell nanowire p–n heterojunctions
Source abstract
Abstract
An efficient, self-powered ultraviolet photoelectrochemical photodetector based on n-GaN/p-Cu2O core–shell nanowire p–n heterojunctions is demonstrated. The photocurrent under solar light is 2–3 times larger than that for GaN nanowires. The photocurrents under the solar light and the ultraviolet light fraction are comparable, 100 µA/cm2 photocurrent density. The photocurrent under the broad visible light part is about 3% of that under solar light. The responsivity and specific detectivity reach 961.5 µA/W and 5.35 × 109 Jones under ultraviolet light, respectively. The rise/fall times are 42/65 ms. This is understood by efficient photocarrier separation, hole collection, and transport in the near-surface GaN/Cu2O p–n heterojunction.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University 1 , Guangzhou 510006, People’s Republic of China
National Center for International Research on Green Optoelectronics, South China Normal University 2 , Guangzhou 510006, People’s Republic of China
Funding
Program for Changjiang Scholars and Innovative Research Team in University · Natural Science Foundation of Guangdong Province
References (29)
Show source-provided references
1. Bifunctional ZnO nanowire/ZnSnO3 heterojunction thin films for photoelectrochemical water splitting and photodetector applications10.1016/j.matlet.2022.132450 ↗
2. Demonstration of photoelectrochemical-type photodetectors using seawater as electrolyte for portable and wireless optical communication10.1002/adom.202102839 ↗
3. Self-powered, broad band, and ultrafast InGaN-based photodetector10.1021/acsami.8b22569 ↗
4. Semipolar (2021–) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication10.7567/1882-0786/ab58eb ↗
5. Noise logic with an InGaN/SiNx/Si uniband diode photodetector10.1038/s41598-022-12481-1 ↗
6. An InGaN/SiNx/Si uniband diode photodetector10.1002/adpr.202100294 ↗
7. Application of a dual functional blocking layer for improvement of the responsivity in a self-powered UV photodetector based on TiO2 nanotubes10.1039/d2ra00379a ↗
8. Self-powered ultraviolet photodetectors driven by built-in electric field10.1002/smll.201701687 ↗
9. Enlightening gallium nitride-based UV photodetectors10.1039/d0tc03219k ↗
10. An analysis of GaN-based ultraviolet photodetector10.1088/1757-899X/738/1/012006 ↗
11. Self-powered UV photodetectors based on ZnO nanomaterials10.1063/5.0058482 ↗
12. Recent advances in UV photodetectors based on 2D materials: A review10.1088/1361-6463/ac33d7 ↗
13. Application of nanostructured TiO2 in UV photodetectors: A review10.1002/adma.202109083 ↗
14. Ordered GaN nanorod arrays for self-powered photoelectrochemical ultraviolet photodetectors10.1021/acsanm.2c02910 ↗
15. Vertically aligned InGaN nanowire arrays on pyramid textured Si (1 0 0): A 3D arrayed light trapping structure for photoelectrocatalytic water splitting10.1016/j.cej.2020.126757 ↗
16. High performance self-powered ultraviolet photodetectors based on electrospun gallium nitride nanowires10.1016/j.apsusc.2018.04.225 ↗
17. Recent developments in p-type oxide semiconductor materials and devices10.1002/adma.201503080 ↗
18. Copper(I)-based p-type oxides for photoelectrochemical and photovoltaic solar energy conversion10.1021/acs.chemmater.6b00926 ↗
19. Thermodynamic oxidation and reduction potentials of photocatalytic semiconductors in aqueous solution10.1021/cm302533s ↗
20. Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN10.1063/1.3548872 ↗
21. Modeling of InGaN/Si tandem solar cells10.1063/1.2952031 ↗
22. Cu2O as hole injection layer on In-rich InGaN nanowires10.1063/1.5145035 ↗
23. Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p–n junctions10.1063/5.0082509 ↗
24. InGaN/Cu2O heterostructure core-shell nanowire photoanode for efficient solar water splitting10.3389/fphy.2021.684283 ↗
25. Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity10.1002/adom.202000893 ↗
26. Pt/AlGaN nanoarchitecture: Toward high responsivity, self-powered ultraviolet-sensitive photodetection10.1021/acs.nanolett.0c03357 ↗
27. Highly sensitive and selective photoelectrochemical aptasensor for cancer biomarker CA125 based on AuNPs/GaN Schottky junction10.1021/acs.analchem.0c02117 ↗
28. Enhance the responsivity and response speed of self-powered ultraviolet photodetector by GaN/CsPbBr3 core-shell nanowire heterojunction and hydrogel10.1016/j.nanoen.2022.107437 ↗
29. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays10.1038/s41377-021-00527-4 ↗