Experimentally investigating the performance degradations of the CMOS PA at different temperatures
Source abstract
Abstract
To investigate the temperature dependency of the specifications for Power Amplifiers (PAs), the performance degradations of an IC PA under different temperature conditions are investigated experimentally. The experimental results show that the performance degradations of the PA are sensitive to temperature changes. The main reasons for these degradations are discussed and analyzed in this paper. The research performed in the study provides another angle to handle the practical working environments rather than the extreme cases as the reliability study.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Electromagnetic Compatibility and Noise Suppression · Electronic Packaging and Soldering Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Institute of Metrology 1 , Beijing 100029, China
School of Microelectronics, Tianjin University 2 , Tianjin 300072, China
Funding
National Natural Science Foundation of China · Aoshan Talents Outstanding Scientist Program
References (32)
Show source-provided references
1. A 5-GHz WLAN RF CMOS power amplifier with a parallel-cascoded configuration and an active feedback linearizer10.1109/tmtt.2017.2691766 ↗
2. A 90 nm CMOS low-power 60 GHz transceiver with integrated baseband circuitry10.1109/jssc.2009.2032584 ↗
3. A K-band CMOS amplifier with temperature compensation for gain variation reduction10.1109/lmwc.2017.2786658 ↗
4. Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application10.7567/jjap.53.110311 ↗
5. A 15-dBm SiGe BiCMOS PA for 77-GHz automotive radar10.1109/tmtt.2011.2166802 ↗
6. A 13.5–19 GHz 20.6-dB gain CMOS power amplifier for FMCW radar application10.1109/lmwc.2017.2679047 ↗
7. A 77–100 GHz power amplifier using 0.1-μm GaAs PHEMT technology10.1088/1674-4926/38/3/035001 ↗
8. A hybrid 50-W GaN-HEMT Ku-band power amplifier10.1109/EuMC.2016.7824534 ↗
9. Design and comparison of various coupled line Tx-filters for a Ku-band block upconverter10.1109/GEMIC.2016.7461596 ↗
10. High efficiency power amplifier for Beidou satellite navigation system
11. See http://www.81.cn/jfjbmap/content/2018-03/09/content_201251.htm for China Military; accessed March 9, 2018.
12. W-band MMIC PA with ultrahigh power density in 100-nm AlGaN/GaN technology10.1109/ted.2016.2597244 ↗
13. Third-octave power amplifier using ring based matching network with high efficiency10.1049/el.2015.4386 ↗
14. A neural network modeling approach to power amplifiers taking into account temperature effects
15. A 500–600 MHz GaN power amplifier with RC–LC stability network10.1088/1674-4926/38/8/085003 ↗
16. Electrical and temperature stress effects on class-AB power amplifier performances10.1109/ted.2007.896601 ↗
17. A K-band phase-locked loop in 0.18 μm CMOS technology for vital sign detection radar
18. 2020 · 1
19. 2017 · 24
20. Study of the index failure for power amplifier caused by temperature10.1007/s10470-016-0807-0 ↗
21. Study of temperature reliability for a parallel high-efficiency class-E power amplifier10.1108/cw-09-2016-0039 ↗
22. Experimentally investigating the degradations of small-signal gain for a GaN class-AB dual-band power amplifier under high temperature and humidity conditions10.1063/5.0036424 ↗
23. Experimentally investigating the degradations of the GaN PA indexes under different temperature conditions10.1002/mop.32663 ↗
24. A 0.1–1.2 GHz CMOS ultra-broadband power amplifier
25. 2003
26. 2001
27. Class-AB SiC CMOS power OPAMP with stable voltage gain over wide temperature range10.1049/ip-cds:19970828 ↗
28. Evaluation of temperature dependence and lifetime of 79 GHz power amplifier
29. Simplified on-line monitoring system of MOSFET on-resistance based on a semi-empirical model
30. Comparison of on-resistance of a power MOSFET by varying temperature
31. 2012 · 1
32. 2006