journal article·2020-07-01Open access

Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming sidewall damages in perpendicular magnetized magnetic tunnel junctions

Hiroshi Naganuma, Hideo Sato, Shoji Ikeda, Tetsuo Endoh

AIP Advances· Volume 10· Issue 7

Abstract

The influence of magnetic damages at the sidewall of perpendicular magnetic tunnel junctions (p-MTJs), which are the core devices of spin-transfer-torque magnetoresistive random-access memory (STT-MRAM), is discussed based on the thermal stability factor, Δ, double-logarithmic plot of normalized switching energy barrier, E, and saturation magnetization, Ms, and their exponential slope, n. Δ was calculated using the string method under the simulation conditions of domain wall motion switching. n increased with the increasing thickness of the damaged layer of the sidewall. Notably, the sidewall damage can be explained by the reduction in Ms and exchange stiffness constant, As, rather than the interfacial perpendicular anisotropy. The findings of this study are important for controlling and improving the process damage in the mass production of p-MTJs in STT-MRAM.
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Research context

OpenAlex topics: Magnetic properties of thin films · Magnetic Properties and Applications · Metallic Glasses and Amorphous Alloys

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Innovative Integrated Electronic System (CIES), Tohoku University 1 , 468-1, Aoba, Aramaki, Aoba-ku, Sendai 980-8572, Japan

Center for Spintronics Research Network (CSRN), Tohoku University 2 , 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan

Center for Science and Innovation in Spintronics (CSIS), Tohoku University 3 , 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan

Graduate School of Engineering, Tohoku University 4 , Sendai 980-8579, Japan

Research Institute of Electrical Communication, Tohoku University 5 , Sendai 980-8577, Japan

Funding

Cross-Ministerial Strategic Innovation Promotion Program · Center for Spintronics Research Network · Center for Science and Innovation in Spintronics · Program on Open Innovation Platform With Enterprises, Research Institute and Academia

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