DataVXAIP AdvancesPaper
journal article·2019-08-01Open access

Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs

Dong Liu, Sang June Cho, Huilong Zhang, Corey R. Carlos, Akhil R. K. Kalapala, Jeongpil Park, Jisoo Kim, Rafael Dalmau, Jiarui Gong, Baxter Moody, Xudong Wang, John D. Albrecht, Weidong Zhou, Zhenqiang Ma

AIP Advances· Volume 9· Issue 8
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Source abstract

Abstract

We investigated two types of threading dislocations in high Al-composition Al0.55Ga0.45N/AlN multiple quantum well (MQW) structures grown on AlN substrate for electrically injected deep ultraviolet light-emitting diodes (LEDs). The surface morphology and defects electrical characteristics of the MQW LED structures were examined via conductive atomic force microscopy (CAFM). We found that the disparity between photoluminescence (PL) and electroluminescence (EL) spectra in terms of light emission output and wavelength shift are attributed to the existence of the surface hillocks, especially to the ones that have open-core dislocations. The open-core dislocations form current leakage paths through their defect states and the composition inhomogeneity (i.e., Ga rich) at the dislocation sites are responsible for the light emission at longer wavelengths.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical and Computer Engineering, University of Wisconsin-Madison 1 , Madison, Wisconsin 53706, USA

Department of Material Science Engineering, University of Wisconsin-Madison 2 , Madison, Wisconsin 53706, USA

Department of Electrical Engineering, University of Texas at Arlington 3 , 500 South Cooper Street, Arlington, Texas 76019, USA

HexaTech, Inc. 4 , 991 Aviation Parkway, Suite 800, Morrisville, North Carolina 27560, USA

Department of Electrical and Computer Engineering, Michigan State University 5 , 428 S. Shaw Lane, East Lansing, Michigan 48824, USA

Funding

Defense Advanced Research Projects Agency

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