Significant enhancement in photocatalytic activity of (GaN)1−x(ZnO)x nanowires via solubility and crystal facet tailoring
Source abstract
Abstract
We report on the solubility and crystal facet tailoring of the wurtzite structured (GaN)1−x(ZnO)x solid solution nanowires via a chemical vapor deposition method. With increasing the growth temperature from 900 °C to 1000 °C, the nanowire morphology is changed from zigzag to straight, and the band gap is increased from 2.70 eV to 3.26 eV, due to decreased solubility of ZnO. Photoelectrochemical and photocatalytic performances of the zigzag nanowires are significantly improved because of the narrower band gap for absorbing more solar light and the special lateral surface atomic structure favorable for the separation of photoinduced electrons and holes.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
TJU−NIMS International Collaboration Laboratory, Key Lab of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin Key Lab of Composite and Functional Materials, School of Materials Science and Engineering, Tianjin University 1 , Nankai District, Tianjin 300072, China
Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) 2 , Nankai District, Tianjin 300072, China
International Center of Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS) 3 , 1−1 Namiki, Tsukuba, Ibaraki 305−0044, Japan
Funding
National Basic Research Program of China · National Natural Science Foundation of China · Natural Science Foundation of Tianjin City
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