DataVXAIP AdvancesPaper
journal article·2012-12-01Open access

Influence of target composition and deposition temperature on the domain structure of BiFeO3 thin films

Rui Guo, Lu You, M. Motapothula, Zhen Zhang, M. B. H. Breese, Lang Chen, Di Wu, Junling Wang

AIP Advances· Volume 2· Issue 4
Publisher pageOpen full text
Source abstract

Abstract

Domain structure of BiFeO3 thin films can be controlled by adjusting the target composition or the substrate temperature during pulsed laser deposition. Decreasing Bi content in the target or increasing substrate temperature changes the domain structure of BiFeO3 from 71° to 109°. We suggest that a combination of interface effect and defect induced internal field causes this evolution.
Source: crossref · Quality: baseline

Research context

Materials processing

OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Nanyang Technological University 1 School of Materials Science and Engineering, , Singapore 639798, Singapore

National University of Singapore 2 Center for Ion Beam Applications, Physics Department, , Lower Kent Ridge Road, Singapore 117542, Singapore

Institute of High Performance Computing 3 , 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Singapore

Nanjing University 4 Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, , Nanjing, Jiangsu 210093, People's Republic of China

References (25)

Show source-provided references
1. Science · 2005 · 309 · 39110.1126/science.1113357 ↗
2. Nature · 2006 · 442 · 75910.1038/nature05023 ↗
3. Nature Mater. · 2007 · 6 · 2110.1038/nmat1805 ↗
4. Nature Mater. · 2006 · 5 · 82310.1038/nmat1731 ↗
5. Science · 2003 · 299 · 171910.1126/science.1080615 ↗
6. Solid State Commun. · 1970 · 8 · 107310.1016/0038-1098(70)90262-0 ↗
7. Solid State Commun. · 1969 · 7 · 70110.1016/0038-1098(69)90597-3 ↗
8. Nano Lett. · 2008 · 8 · 205010.1021/nl801391m ↗
9. Adv. Mater. · 2010 · 22 · 496410.1002/adma.201001990 ↗
10. Nature Mater. · 2008 · 7 · 47810.1038/nmat2184 ↗
11. Nature Mater. · 2009 · 8 · 22910.1038/nmat2373 ↗
12. Phys. Rev. Lett. · 2010 · 105 · 19760310.1103/PhysRevLett.105.197603 ↗
13. Nature Nanotech. · 2010 · 5 · 14310.1038/nnano.2009.451 ↗
14. Phys. Rev. B · 2009 · 80 · 10411010.1103/PhysRevB.80.104110 ↗
15. Ferroelectrics · 2008 · 375 · 12210.1080/00150190802437969 ↗
16. Appl. Phys. Lett. · 2005 · 87 · 18291210.1063/1.2126804 ↗
17. J. Appl. Phys. · 1998 · 83 · 274210.1063/1.366632 ↗
18. Nano Lett. · 2009 · 9 · 172610.1021/nl900723j ↗
19. Adv. Mater. · 2006 · 18 · 230710.1002/adma.200601098 ↗
20. Adv. Mater. · 2007 · 19 · 266210.1002/adma.200602972 ↗
21. Phys. Rev. B · 2009 · 80 · 02410510.1103/PhysRevB.80.024105 ↗
22. Phase transitions. · 2006 · 79 · 99110.1080/01411590601067144 ↗
23. Nano Lett. · 2006 · 6 · 48310.1021/nl052452l ↗
24. PNAS. · 2012 · 109 · 971010.1073/pnas.1117990109 ↗
25. Appl. Phys. Lett. · 2009 · 95 · 01290410.1063/1.3171939 ↗