Epitaxial growth of (AlxGa1−x)2O3 thin films on sapphire substrates by plasma assisted pulsed laser deposition
Source abstract
Abstract
(AlxGa1−x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1−x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1−x)2O3.
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University 1 , Saga 840-8502, Japan
Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University 2 , 744 Motooka, Fukuoka 819-0395, Japan
Funding
Japan Society for the Promotion of Science
References (26)
Show source-provided references
1. Recent progress on the electronic structure, defect, and doping properties of Ga2O310.1063/1.5142999 ↗
2. Nanoplasmonically enhanced high-performance metastable phase alpha-Ga2O3 solar-blind photodetectors10.1021/acsami.9b13863 ↗
3. Nano tree-like branched structure with α-Ga2O3 covered by γ-Al2O3 for highly efficient detection of solar-blind ultraviolet light using self-powered photoelectrochemical method10.1016/j.apsusc.2020.148380 ↗
4. Sub-microsecond response time deep-ultraviolet photodetectors using α-Ga2O3 thin films grown via low-temperature atomic layer deposition10.1016/j.jallcom.2018.11.333 ↗
5. Review of Ga2O3 based optoelectronic devices10.1016/j.mtphys.2019.100157 ↗
6. Epitaxial Nd-doped α-(Al1−xGax)2O3 films on sapphire for solid-state waveguide lasers10.1364/ol.35.003793 ↗
7. Electrical and optical properties of near UV transparent conductive ITO/Ga2O3 multilayer films deposited by RF magnetron sputtering10.1063/1.4966537 ↗
8. Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices10.7567/jjap.55.1202a3 ↗
9. Optical properties of mist CVD grown α-Ga2O310.1109/lpt.2020.2976450 ↗
10. Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga2O3 single crystal10.1063/1.4921060 ↗
11. Heteroepitaxial growth of α-Ga2O3 thin films on a-, c- and r-plane sapphire substrates by low-cost mist-CVD method10.1016/j.jallcom.2020.154776 ↗
12. Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum α-Ga2O3 on sapphire10.1016/j.apsusc.2020.145871 ↗
13. Growth mechanism of α-Ga2O3 on a sapphire substrate by mist chemical vapor deposition using acetylacetonated gallium source solutions10.1063/5.0014056 ↗
14. Effect of post-deposition annealing on low temperature metalorganic chemical vapor deposited gallium oxide related materials10.1016/j.jcrysgro.2016.11.005 ↗
15. Epitaxial growth and solar-blind photoelectric properties of corundum-structured α-Ga2O3 thin films10.1016/j.matlet.2015.11.001 ↗
16. Lattice vibrations and optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy10.1088/1361-6641/ab97f5 ↗
17. Anisotropic optical properties of metastable (011¯2) α-Ga2O3 grown by plasma-assisted molecular beam epitaxy10.1103/physrevapplied.10.024047 ↗
18. Growth and band gap control of corundum-structured α-(AlGa)2O3 thin films on sapphire by spray-assisted mist chemical vapor deposition10.1143/jjap.51.100207 ↗
19. Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard’s law10.1063/1.5037678 ↗
20. Low temperature growth of (AlGa)2O3 films by oxygen radical assisted pulsed laser deposition10.1039/c9ce01541h ↗
21. Evaluation of band alignment of α-Ga2O3/α-(AlxGa1−x)2O3 heterostructures by X-ray photoelectron spectroscopy10.7567/jjap.57.040314 ↗
22. Wide bandgap engineering of (AlGa)2O3 films10.1063/1.4900522 ↗
23. Structural and electronic properties of Ga2O3-Al2O3 alloys10.1063/1.5036991 ↗
24. Energy band bowing parameter in MgZnO alloys10.1063/1.4926980 ↗
25. Band gap and band offset of Ga2O3 and (AlxGa1−x)2O3 alloys10.1103/physrevapplied.10.011003 ↗
26. Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4 to 8.6-eV α-(AlGa)2O3 on m-plane sapphire10.1126/sciadv.abd5891 ↗