Facile process to clean PMMA residue on graphene using KrF laser annealing
Source abstract
Abstract
Persistent PMMA residue formed during a graphene transfer has been a culprit in the optimization of graphene device performance. We demonstrated a facile process to remove the PMMA residue using pulsed KrF laser annealing system at H2/Ar ambient. 10min laser annealing at 248nm could remove the PMMA residue as well as the methoxy and carboxyl function groups without causing noticeable damage to the graphene.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Diamond and Carbon-based Materials Research · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Emerging Electric Devices and Systems, Gwangju Institute of Science and Technology 1 , Cheomdan Gwagiro 123, Buk-gu, Gwangju 61005, Korea
School of Materials Science and Engineering, Gwangju Institute of Science and Technology 2 , Cheomdan Gwagiro 123, Buk-gu, Gwangju 61005, Korea
Departmant of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology 3 , Cheomdan Gwagiro 123, Buk-gu, Gwangju 61005, Korea
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