Extrinsic pinning of magnetic domain walls in CoFeB-MgO nanowires with perpendicular anisotropy
Source abstract
Abstract
In this work, we have studied the mechanism of domain wall motion in 0.2-1.5 μm wide nanowires based on Ta/CoFeB/MgO films with perpendicular magnetic anisotropy. We show that domain wall propagation can be completely stopped due to the presence of strong pinning sites along the nanowires. From the analysis of the distribution of the strongest depinning fields as a function of the wire width, we evidence the presence of extrinsic pinning sites in nanowires, probably induced by edge damages, that dominate over the intrinsic pinning of the magnetic films even for these large wire widths.
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Research context
OpenAlex topics: Magnetic properties of thin films · Magnetic Properties and Applications · ZnO doping and properties
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Affiliations
Fert Beijing Research Institute, BDBC, School of Electronic and Information Engineering, Beihang University 1 , Beijing 100191, China
Centre de Nanoscience et de Nanotechnologie, UMR-CNRS 9001, Université Paris-Sud 2 , Orsay, France
INAC/SP2M, CEA-Université Joseph Fourier 3 , F-38054, Grenoble, France
References (14)
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