journal article·2016-06-01Open access

Luminescence evolution from alumina ceramic surface before flashover under direct and alternating current voltage in vacuum

Guo-Qiang Su, Yi-Bo Wang, Bai-Peng Song, Hai-Bao Mu, Guan-Jun Zhang, Feng Li, Meng Wang

AIP Advances· Volume 6· Issue 6

Abstract

The luminescence evolution phenomena from alumina ceramic surface in vacuum under high voltage of direct and alternating current are reported, with the voltage covering a large range from far below to close to the flashover voltage. Its time resolved and spatial distributed behaviors are examined by a photon counting system and an electron-multiplying charge-coupled device (EMCCD) together with a digital camera, respectively. The luminescence before flashover exhibits two stages as voltage increasing, i.e., under a relative low voltage (Stage A), the luminescence is ascribed to radiative recombination of hetero-charges injected into the sample surface layer by Schottky effect; under a higher voltage (Stage B), a stable secondary electron emission process, resulting from the Fowler-Nordheim emission at the cathode triple junction (CTJ), is responsible for the luminescence. Spectrum analysis implies that inner secondary electrons within the surface layer of alumina generated during the SSEE process also participate in the luminescence of Stage B. A comprehensive interpretation of the flashover process is formulated, which might promote a better understanding of flashover issue in vacuum.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: High voltage insulation and dielectric phenomena · Semiconductor materials and devices · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Xi’an Jiaotong University 1 State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, , Xi’an, Shaanxi 710049, China

China Academy of Engineering Physics 2 Institute of Fluid Physics, , Mianyang, Sichuan 621900, China

Funding

National Natural Science Foundation of China · China National Funds for Distinguished Young Scientists

References (22)

Show source-provided references
1. J. Appl. Phys. · 2014 · 115
2. IEEE Trans. Dielectr. Electr. Insul. · 2015 · 22 · 59710.1109/TDEI.2014.004566 ↗
3. Appl. Phys. Lett. · 1974 · 24 · 5410.1063/1.1655091 ↗
4. Dielectrics & Electrical Insulation IEEE Transactions on · 2015 · 22 · 364110.1109/TDEI.2015.004702 ↗
5. IEEE Trans. Electr. Insul. · 1993 · 28 · 51210.1109/14.231534 ↗
6. J. Appl. Phys. · 2015 · 11710.1063/1.4913213 ↗
7. IEEE Trans. Plasma Sci. · 2015 · 43 · 354610.1109/TPS.2015.2423852 ↗
8. IEEE Trans. Dielectr. Electr. Insul. · 2015 · 22 · 239010.1109/TDEI.2015.004948 ↗
9. IEEE Trans. Dielectr. Electr. Insul. · 2014 · 21 · 40310.1109/TDEI.2013.004136 ↗
10. Appl. Phys. Lett. · 2001 · 78 · 62510.1063/1.1344573 ↗
11. Appl. Phys. Lett. · 2012 · 101 · 04160410.1063/1.4738999 ↗
12. IEEE Trans. Plasma Sci. · 2014 · 42 · 257610.1109/TPS.2014.2312724 ↗
13. IEEE Trans. Dielectr. Electr. Insul. · 1999 · 5 · 90310.1109/94.740774 ↗
14. J. Appl. Phys. · 1985 · 58 · 434610.1063/1.335523 ↗
15. IEEE Trans. Dielectr. Electr. Insul. · 2013 · 20 · 35710.1109/TDEI.2013.6508737 ↗
16. 1995 · 20
17. Nano Lett. · 2006 · 6 · 94810.1021/nl052576y ↗
18. IEEE Trans. Dielectr. Electr. Insul. · 1997 · 4 · 58510.1109/94.625646 ↗
19. IEEE Trans. Dielectr. Electr. Insul. · 2009 · 16 · 137610.1109/TDEI.2009.5293951 ↗
20. J. Appl. Phys. · 2013 · 113 · 01330110.1063/1.4772965 ↗
21. Phys. Status Solidi (a) · 1991 · 126 · 52110.1002/pssa.2211260224 ↗
22. J. Phys. D: Appl. Phys. · 1994 · 27 · 144810.1088/0022-3727/27/7/016 ↗