journal article·2019-02-01Open access

Enhanced MWIR absorption of HgCdTe (MCT) via plasmonic metal oxide nanostructures

Nagendrababu Vanamala, Kevin C. Santiago, Naresh C. Das

AIP Advances· Volume 9· Issue 2

Abstract

Mercury Cadmium Telluride (MCT) is the premier active material used in infrared (IR) detection technology. The most recent work related to the improvement of MCT-based detectors is associated with reducing the s/n ratio, and increasing the operating temperature without compromising performance. However, little has been done in manipulating the Electric field intensity near the absorber region of the device. Our numerical studies show that the absorption profile of MCT in the mid-infrared can be enhanced by integrating metal oxide nanostructures. This work may improve the dynamic range and sensitivity of infrared detectors capable of operating in multiple detection windows.
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Research context

OpenAlex topics: Advanced Semiconductor Detectors and Materials · Gold and Silver Nanoparticles Synthesis and Applications · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center of Excellence in CISE, Tennessee State University 1 , Nashville, TN 37209, United States

Semiconductor Optoelectronics Device Branch, Army Research Lab 2 , Adelphi, Maryland 20783, USA

References (30)

Show source-provided references
1. QWIP and MCT for long wavelength and multicolor focal plane array applications
2. 15µm quantum well infrared photodetector for thermometric imagery in cryogenic windtunnel
3. Progress in infrared photodetectors since 200010.3390/s130405054 ↗
4. 1994
5. 2009
6. Progress, challenges, and opportunities for HgCdTe infrared materials and detectors
7. HgCdTe photodiodes for IR detection: a review
8. Multi-heterojunction large area HgCdTe long wavelength infrared photovoltaic detector for operation at near room temperatures10.1007/s11664-998-0046-y ↗
9. A model for the prediction of radiation defect profiles in the semiconductor target (HgCdTe) subjected to high power short pulsed ion beams
10. Recombination mechanisms in p-type HgCdTe: Freezeout and background flux effects
11. Recombination mechanisms in 8–14-μ HgCdTe
12. HgCdTe infrared detector material: history, status and outlook
13. Surface plasmon resonance10.1385/abab:126:2:079 ↗
14. Nano-optics of surface plasmon polaritons
15. Modeling of HgCdTe photoconductive infrared detector with metallic nanostructures
16. Extreme tunability in aluminum doped zinc oxide plasmonic materials for near-infrared applications
17. 2018
18. Tunability of indium tin oxide materials for mid infrared plasmonics applications
19. Nano-optics of surface plasmon plaritons
20. Surface-enhanced raman spectroscopy10.1146/annurev.anchem.1.031207.112814 ↗
21. A method of removing the valence band discontinuity in HgCdTe-based nBn detectors
22. The reverse current temperature dependences of SWIR CdHgTe ‘p-on-n’ and ‘n-on-p’ junctions10.1016/j.infrared.2015.09.026 ↗
23. Improvement of RTS noise in HgCdTe MWIR detectors10.1007/s11664-014-3217-z ↗
24. Infrared plasmonics with indium–tin-oxide nanorod arrays10.1021/nn203406f ↗
25. Dual-band photon sorting plasmonic MIM metamaterial sensor
26. Improving injection efficiency of gate modulation ROIC interface for HgCdTe IR photodiodes10.1007/s00542-016-2919-y ↗
27. Imaging performance of advances QWIP focal plane arrays10.1142/s0129156402001666 ↗
28. Suppression of dark current through barrier engineer for solution-processed colloidal q uantum-dots infrared photodetectors
29. 2014
30. MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice10.1134/s1063782617020099 ↗