journal article·2018-04-01Open access

Excellent field emission properties of vertically oriented CuO nanowire films

Long Feng, Hui Yan, Heng Li, Rukang Zhang, Zhe Li, Rui Chi, Shuaiyu Yang, Yaya Ma, Bin Fu, Jiwen Liu

AIP Advances· Volume 8· Issue 4

Abstract

Oriented CuO nanowire films were synthesized on a large scale using simple method of direct heating copper grids in air. The field emission properties of the sample can be enhanced by improving the aspect ratio of the nanowires just through a facile method of controlling the synthesis conditions. Although the density of the nanowires is large enough, the screen effect is not an important factor in this field emission process because few nanowires sticking out above the rest. Benefiting from the unique geometrical and structural features, the CuO nanowire samples show excellent field emission (FE) properties. The FE measurements of CuO nanowire films illustrate that the sample synthesized at 500 °C for 8 h has a comparatively low turn-on field of 0.68 V/μm, a low threshold field of 1.1 V/μm, and a large field enhancement factor β of 16782 (a record high value for CuO nanostructures, to the best of our knowledge), indicating that the samples are promising candidates for field emission applications.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology 1 , Tianjin 300384, China

Key Laboratory of Display Materials and Photoelectric Devices, Tianjin University of Technology, Ministry of Education 2 , Tianjin 300384, China

Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University 3 , Xiamen 361005, China

Jiujiang Research Institute of Xiamen University 4 , Jiujiang 332000, China

Funding

National Science Foundation of Fujian Province of China · Science and Technology Development Fund of Higher Education of Tianjin of China · Tianjin Research Program of Application Foundation and Advanced Technology of China · National Natural Science Foundation of China

References (34)

Show source-provided references
1. Appl. Surf. Sci. · 2005 · 251 · 17010.1016/j.apsusc.2005.03.201 ↗
2. Science · 1995 · 270 · 117910.1126/science.270.5239.1179 ↗
3. Carbon · 2006 · 44 · 41810.1016/j.carbon.2005.09.004 ↗
4. New Carbon Mater. · 2011 · 26 · 5210.1016/s1872-5805(11)60065-6 ↗
5. Vacuum · 2015 · 115 · 7010.1016/j.vacuum.2015.02.015 ↗
6. Adv. Mater. · 2003 · 15 · 183510.1002/adma.200305528 ↗
7. Appl. Phys. Lett. · 2003 · 82 · 109610.1063/1.1554477 ↗
8. Appl. Phys. Lett. · 2016 · 109 · 08210410.1063/1.4961585 ↗
9. Appl. Phys. Mater. · 2001 · 73 · 77310.1007/s003390101014 ↗
10. Langmuir · 2003 · 19 · 585910.1021/la0342870 ↗
11. Nanoscale · 2010 · 2 · 210410.1039/c0nr00279h ↗
12. Progr. Mater. Sci. · 2014 · 60 · 20810.1016/j.pmatsci.2013.09.003 ↗
13. Sci. Adv. Mater. · 2010 · 2 · 29510.1166/sam.2010.1095 ↗
14. Nanotechnology · 2005 · 16 · 8810.1088/0957-4484/16/1/018 ↗
15. J. Nanosci. Nanotechno. · 2011 · 11 · 719910.1166/jnn.2011.4788 ↗
16. Mater. Lett. · 2016 · 171 · 22010.1016/j.matlet.2016.02.096 ↗
17. Chem. Phys. Lett. · 2006 · 419 · 45810.1016/j.cplett.2005.11.087 ↗
18. J. Appl. Phys. · 2007 · 102 · 11430210.1063/1.2818096 ↗
19. Cryst. Growth Des. · 2009 · 9 · 222910.1021/cg800953w ↗
20. Cryst. Eng. Comm. · 2010 · 12 · 223210.1039/b919043k ↗
21. Acta Mater. · 2009 · 57 · 157010.1016/j.actamat.2008.12.003 ↗
22. Chem. Phys. Lett. · 2011 · 512 · 8710.1016/j.cplett.2011.07.012 ↗
23. Mater. Res. Bull. · 2011 · 46 · 212010.1016/j.materresbull.2011.06.039 ↗
24. Cryst. Growth Des. · 2018 · 18 · 84910.1021/acs.cgd.7b01317 ↗
25. Mater. Res. Bull. · 2013 · 48 · 210210.1016/j.materresbull.2013.02.021 ↗
26. RSC Adv. · 2017 · 7 · 643910.1039/c6ra27426a ↗
27. Appl. Surf. Sci. · 2015 · 329 · 9410.1016/j.apsusc.2014.12.148 ↗
28. J. Mater. Sci. · 2010 · 45 · 379110.1007/s10853-010-4433-4 ↗
29. Nano Lett. · 2002 · 2 · 133310.1021/nl0257519 ↗
30. J. Mater. Chem. C · 2014 · 2 · 451510.1039/c4tc00524d ↗
31. Proc. R. Soc. London, Ser. A · 1928 · 119 · 17310.1098/rspa.1928.0091 ↗
32. Small · 2014 · 10 · 68510.1002/smll.201301948 ↗
33. J. Appl. Phys. · 2011 · 109 · 02371010.1063/1.3536478 ↗
34. J. Mater. Chem. C · 2015 · 3 · 638910.1039/c5tc00662g ↗