Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions
Source abstract
Abstract
The current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Graphene research and applications · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Chonbuk National University 1 School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), , Jeonju 54896, Republic of Korea
Korea Institute of Science and Technology (KIST) 2 Soft innovative Materials Research Center, , Jeonbuk 565-905, Republic of Korea
Funding
National Research Foundation of Korea · Ministry of Trade, Industry and Energy
References (29)
Show source-provided references
1. Nano Lett. · 2010 · 10 · 395210.1021/nl101724k ↗
2. Nat. Nanotech. · 2009 · 4 · 83910.1038/nnano.2009.292 ↗
3. ACS Nano · 2010 · 4 · 80310.1021/nn901703e ↗
4. Nano Lett. · 2008 · 8 · 32310.1021/nl072838r ↗
5. J. Appl. Phys. · 2014 · 115 · 05450310.1063/1.4863640 ↗
6. Nat. Commun. · 2012 · 3 · 82710.1038/ncomms1828 ↗
7. J. Appl. Phys. · 1999 · 85 · 322210.1063/1.369664 ↗
8. Appl. Phys. Lett. · 2002 · 81 · 124910.1063/1.1501162 ↗
9. Appl. Phys. Lett. · 2000 · 77 · 25010.1063/1.126940 ↗
10. IEEE Trans. Electron Devices · 2001 · 48 · 58610.1109/16.906455 ↗
11. IEEE Trans. Electron Devices · 2002 · 90 · 1022
12. IEEE Trans. Electron Devices · 2001 · 48 · 46510.1109/16.906437 ↗
13. IEEE Trans. Electron Devices · 2001 · 48 · 56010.1109/16.906451 ↗
14. J. Appl. Phys. · 2010 · 108 · 06371910.1063/1.3481412 ↗
15. Nanoscale · 2014 · 6 · 867110.1039/C4NR01150C ↗
16. Appl. Phys. Lett. · 2014 · 105 · 16210310.1063/1.4898070 ↗
17. Phys. Status Solidi C · 2014 · 11 · 155110.1002/pssc.201400078 ↗
18. Appl. Phys. Lett. · 2013 · 102 · 15350110.1063/1.4801940 ↗
19. Nano Res. · 2014 · 8 · 132710.1007/s12274-014-0624-7 ↗
20. Appl. Phys. Lett. · 2014 · 105 · 06311710.1063/1.4893327 ↗
21. 1988 · 15
22. Semicond. Sci. Technol · 1995 · 10 · 168010.1088/0268-1242/10/12/019 ↗
23. J. Appl. Phys. · 2000 · 87 · 80110.1063/1.371944 ↗
24. Appl. Phys. Lett. · 2013 · 103 · 17160410.1063/1.4826642 ↗
25. Appl. Phys. Lett. · 2001 · 78 · 250310.1063/1.1367275 ↗
26. Phys. Status Solidi C · 2012 · 9 · 85110.1002/pssc.201100487 ↗
27. Nano Lett. · 2012 · 12 · 388710.1021/nl300266p ↗
28. Phys. Rev. · 1947 · 71 · 71710.1103/PhysRev.71.717 ↗
29. J. Appl. Phys. · 2003 · 94 · 720110.1063/1.1625101 ↗