journal article·2016-06-01Open access

Toward error-free scaled spin torque majority gates

Adrien Vaysset, Mauricio Manfrini, Dmitri E. Nikonov, Sasikanth Manipatruni, Ian A. Young, Geoffrey Pourtois, Iuliana P. Radu, Aaron Thean

AIP Advances· Volume 6· Issue 6

Abstract

The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Magnetic properties of thin films · Quantum and electron transport phenomena · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

IMEC 1 , Kapeldreef 75, 3001 Leuven, Belgium

Intel Corp. 2 Exploratory Integrated Circuits, Components Research, , Hillsboro, Oregon 97124, USA

References (26)

Show source-provided references
1. Proceedings of the IEEE · 2003 · 91 · 193410.1109/JPROC.2003.818324 ↗
2. Reviews of Modern Physics · 2004 · 76 · 32310.1103/RevModPhys.76.323 ↗
3. Physical Review B · 1996 · 54 · 935310.1103/PhysRevB.54.9353 ↗
4. Journal of Magnetism and Magnetic Materials · 1996 · 159 · L110.1016/0304-8853(96)00062-5 ↗
5. Nature Materials · 2007 · 6 · 81310.1038/nmat2024 ↗
6. IEEE Transactions on Magnetics · 2009 · 45 · 340010.1109/TMAG.2009.2025257 ↗
7. Science · 2000 · 287 · 146610.1126/science.287.5457.1466 ↗
8. IEEE Transactions on Magnetics · 2012 · 48 · 433610.1109/TMAG.2012.2197184 ↗
9. Nanotechnology · 2014 · 25 · 33520210.1088/0957-4484/25/33/335202 ↗
10. IEEE Transactions on Nanotechnology · 2012 · 11 · 22010.1109/TNANO.2010.2056697 ↗
11. Nature · 2003 · 425 · 48510.1038/nature02014 ↗
12. Journal of Applied Physics · 2009 · 105 · 07D10210.1063/1.3056141 ↗
13. Science · 2005 · 309 · 168810.1126/science.1108813 ↗
14. IEEE Transactions on Magnetics · 2012 · 48 · 321510.1109/TMAG.2012.2197186 ↗
15. IEEE Magnetics Letters · 2012 · 3 · 310.1109/LMAG.2012.2188621 ↗
16. Physical Review Applied · 2014 · 2 · 04400110.1103/PhysRevApplied.2.044001 ↗
17. Applied Physics Letters · 2014 · 105 · 15241010.1063/1.4898042 ↗
19. Nature Nanotechnology · 2010 · 5 · 26610.1038/nnano.2010.31 ↗
20. Applied Physics Letters · 2011 · 98 · 12351010.1063/1.3567772 ↗
21. S. Manipatruni, D. Nikonov, and I. Young, arXiv:1212.3362 (2012).
22. IEEE Electron Device Letters · 2011 · 32 · 112810.1109/LED.2011.2156379 ↗
23. Journal of Applied Physics · 2014 · 115 · 2410.1063/1.4868621 ↗
24. M. Donahue and D. Porter, OOMMF User’s Guide, Version 1.0, Interagency Report NISTIR 6376 (National Institute of Standards and Technology, Gaithersburg, MD, 1999).10.6028/NIST.IR.6376 ↗
25. Physical Review B · 2000 · 62 · 57010.1103/PhysRevB.62.570 ↗
26. See supplementary material at http://dx.doi.org/10.1063/1.4953672 for the simulation protocol of Figs 4 and for more details on the magnetization dynamics.