journal article·2016-05-01Open access

Formation of high electrical-resistivity thin surface layer on carbonyl-iron powder (CIP) and thermal stability of nanocrystalline structure and vortex magnetic structure of CIP

K. Sugimura, Y. Miyajima, M. Sonehara, T. Sato, F. Hayashi, N. Zettsu, K. Teshima, H. Mizusaki

AIP Advances· Volume 6· Issue 5

Abstract

This study focuses on the carbonyl-iron powder (CIP) used in the metal composite bulk magnetic core for high-efficient/light-weight SiC/GaN power device MHz switching dc-dc converter, where the fine CIP with a mean diameter of 1.1 μm is used to suppress the MHz band eddy current inside the CIP body. When applying the CIP to composite core together with the resin matrix, high electrical resistivity layer must be formed on the CIP-surface in order to suppress the overlapped eddy current between adjacent CIPs. In this study, tens nm thick silica (SiO2) was successfully deposited on the CIP-surface by using hydrolysis of TEOS (Si(OC2H5)4). Also tens nm thick oxidized layer of the CIP-surface was successfully formed by using CIP annealing in dry air. The SiC/GaN power device can operate at ambient temperature over 200 degree-C, and the composite magnetic core is required to operate at such ambient temperature. The as-made CIP had small coercivity below 800 A/m (10 Oe) due to its nanocrystalline-structure and had a single vortex magnetic structure. From the experimental results, both nanocrystalline and single vortex magnetic structure were maintained after heat-exposure of 250 degree-C, and the powder coercivity after same heat-exposure was nearly same as that of the as-made CIP. Therefore, the CIP with thermally stable nanocrystalline-structure and vortex magnetic state was considered to be heat-resistant magnetic powder used in the iron-based composite core for SiC/GaN power electronics.
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Research context

OpenAlex topics: Silicon Carbide Semiconductor Technologies · Metallic Glasses and Amorphous Alloys · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shinshu University 1 Spin Device Technology Center, Faculty of Engineering, , 4-17-1 Wakasato, Nagano 380-8553, Japan

Shinshu University 2 Center for Energy and Environmental Science, , 4-17-1 Wakasato, Nagano 380-8553, Japan

Nagano Prefecture General Industrial Technology Center 3 Precision and Electronics Technology Department, , 1-3-1 Osachi Katama-Cho, Okaya 394-0084, Japan

Funding

Japan Society for the Promotion of Science

References (6)

Show source-provided references
2. IEEE Transactions on Electron Devices · 2006 · 53 · 290810.1109/TED.2006.885532 ↗
3. Journal of Colloid and Interface Science · 1968 · 26 · 6210.1016/0021-9797(68)90272-5 ↗
4. IEEJ Transactions on Fundamentals and Materials · 2011 · 131 · 94910.1541/ieejfms.131.949 ↗
5. IEEE Transactions on Magnetics · 1990 · 26 · 139710.1109/20.104389 ↗
6. Physical Review · 1939 · 56 · 97810.1103/PhysRev.56.978 ↗