Secondary electron effect on sustaining capacitively coupled discharges: A hybrid modeling investigation of the ionization rate
Source abstract
Abstract
A one-dimensional fluid/Monte Carlo hybrid model was used to quantitatively study the secondary electron effect on sustaining the discharge by examining the ionization induced by bulk electrons and secondary electrons under different external discharge parameters. The results indicate that as the voltage increases, secondary electrons gain more energy from the stronger electric field. Therefore, the ionization region induced by secondary electrons expands and the ionization rate becomes comparable to and even exceeds that of bulk electrons. As the pressure increases, secondary electrons collide with neutrals sufficiently, thus their contribution to the plasma generation becomes pronounced and eventually they dominate the discharge. Besides, the distribution of the secondary electron ionization rate varies from flat to saddle-shape, due to the energy loss at the discharge center at higher pressures. Finally, when the discharge gap expands, the electron density calculated in the case without secondary electrons increases linearly, whereas the value first increases and then decreases in the model with secondary electrons taken into account. The results obtained in this work are important for improving the high aspect ratio etching process by secondary electrons.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Plasma Diagnostics and Applications · Electrohydrodynamics and Fluid Dynamics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Materials Modification By Laser, Ion, and Electron Beams (Ministry of Education), School of Physics, Dalian University of Technology , Dalian 116024, People’s Republic of China
Funding
National Natural Science Foundation of China
References (34)
Show source-provided references
1. 2005
2. Appl. Phys. · 1991 · 70 · 531410.1063/1.350241 ↗
3. J. Vac. Sci. Technol. A · 2008 · 26 · 141510.1116/1.2981064 ↗
4. J. Vac. Sci. Technol. A · 2007 · 25 · 145610.1116/1.2771561 ↗
5. Plasma Sources Sci. Technol. · 2008 · 17 · 04500210.1088/0963-0252/17/4/045002 ↗
6. Appl. Phys. Lett. · 2008 · 93 · 26150210.1063/1.3062853 ↗
7. J. Appl. Phys. · 2010 · 107 · 02330810.1063/1.3290870 ↗
8. J. Plasma Sources Sci. Technol. · 2015 · 24 · 05400310.1088/0963-0252/24/5/054003 ↗
9. J. American Institute of Chemical Engineers AIChE. · 2013 · 59 · 321410.1002/aic.14053 ↗
10. Appl. Phys. Lett. · 2008 · 92 · 17150110.1063/1.2917795 ↗
11. J. Appl. Phys. · 2013 · 46 · 13520110.1088/0022-3727/46/13/135201 ↗
12. Chin. Phys. B. · 2018 · 27 · 02520110.1088/1674-1056/27/2/025201 ↗
13. Phys. Rev. Lett. · 1986 · 65 · 99610.1103/physrevlett.65.996 ↗
14. Phys. Rev. A · 1990 · 42 · 229910.1103/physreva.42.2299 ↗
15. IEEE Trans. Plasma Sci. · 1988 · 16 · 63810.1109/27.16552 ↗
16. Sov. Phys. Tech. Phys. · 1957 · 2 · 887
17. J. Appl. Phys. · 1992 · 72 · 398810.1063/1.352251 ↗
18. J. Plasma Sources Sci. Technol. · 2013 · 22 · 015012
19. Phys. Plasma. · 2006 · 13 · 10350510.1063/1.2364135 ↗
20. Physics of Plasmas · 2008 · 15 · 03350210.1063/1.2888516 ↗
21. Journal of Applied Physics · 2014 · 115 · 22330210.1063/1.4882297 ↗
22. J. Phys. D: Appl. Phys. · 2017 · 50 · 15520110.1088/1361-6463/aa60f7 ↗
23. J. Appl. Phys. · 1999 · 38 · 440410.1143/jjap.38.4404 ↗
24. J. Vac. Sci. Technology. A · 2015 · 33 · 06130310.1116/1.4928033 ↗
25. J. Appl. Phys. · 1992 · 71 · 165410.1063/1.351196 ↗
26. J. Appl. Phys. · 1995 · 78 · 223310.1063/1.360139 ↗
27. J. Plasma Sources Sci. Technol. · 2014 · 23 · 06504010.1088/0963-0252/23/6/065040 ↗
28. J. Plasma Sources Sci. Technol. · 1999 · 8 · R2110.1088/0963-0252/8/3/201 ↗
29. J. Plasma Sources Sci. Technol. · 2012 · 21 · 05502310.1088/0963-0252/21/5/055023 ↗
30. J. Appl. Phys. · 1994 · 76 · 564610.1063/1.358435 ↗
31. J. Comput. Phys. · 2002 · 176 · 404
32. Rev. Sci. Instrum. · 1993 · 64 · 3110.1063/1.1144398 ↗
33. Surf. Sci. · 1979 · 90 · 24010.1016/0039-6028(79)90341-8 ↗
34. J. Appl. Phys. · 1992 · 72 · 9