Structural properties of GeSn thin films grown by molecular beam epitaxy
Source abstract
Abstract
GeSn thin films on Ge (001) with various Sn concentrations from 3.36 to 7.62% were grown by molecular beam epitaxy and characterized. The structural properties were analyzed by reciprocal space mapping in the symmetric (004) and asymmetric (224) planes by high resolution X-ray diffraction (XRD). The lateral correlation length (LCL) and the mosaic spread (MS) were extracted for the epi-layer peaks in the asymmetric (224) diffraction. With the increase of Sn concentration, the LCL reduces while the MS increases, indicating degrading crystalline quality. Dislocations were observed in the sample with 7.62% Sn concentration by transmission electron microscope, consistent with the strain relaxation found in XRD mapping. Besides, the surface morphologies were investigated.
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Research context
OpenAlex topics: Photonic and Optical Devices · Semiconductor Quantum Structures and Devices · Photonic Crystals and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Chinese Academy of Sciences 1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, , Shanghai 200050, China
ShanghaiTech University 2 School of Physical Science and Technology, , Shanghai 201210, China
University of Chinese Academy of Sciences 3 , Beijing 100190, China
Chalmers University of Technology 4 Department of Microtechnology and Nanoscience, , Gothenburg 41296, Sweden
Funding
Creative Research Group Project of Natural Science Foundation of China
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