journal article·2016-06-01Open access

Unconventional magnetization of Fe3O4 thin film grown on amorphous SiO2 substrate

Jia-Xin Yin, Zhi-Guo Liu, Shang-Fei Wu, Wen-Hong Wang, Wan-Dong Kong, Pierre Richard, Lei Yan, Hong Ding

AIP Advances· Volume 6· Issue 6

Abstract

High quality single crystal Fe3O4 thin films with (111) orientation had been prepared on amorphous SiO2 substrate by pulsed laser deposition. The magnetization properties of the films are found to be unconventional. The Verwey transition temperature derived from the magnetization jump is around 140K, which is higher than the bulk value and it can be slightly suppressed by out-plane magnetic field; the out-of-plane magnetization, which is unexpectedly higher than the in-plane value, is also significantly increased as compared with the bulk value. Our findings highlight the unusual magnetization of Fe3O4 thin film grown on the amorphous SiO2 substrate.
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Research context

OpenAlex topics: Magnetic Properties and Synthesis of Ferrites · Magnetic properties of thin films · Magneto-Optical Properties and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Chinese Academy of Sciences 1 Institute of Physics, , Beijing 100190, China

Collaborative Innovation Center of Quantum Matter 2 , Beijing 100190, China

Funding

National Natural Science Foundation of China · Chinese Academy of Sciences · Ministry of Science and Technology of the People's Republic of China

References (21)

Show source-provided references
1. Nature (London) · 1939 · 144 · 32710.1038/144327b0 ↗
2. Phys. Rev. B · 1991 · 44 · 1331910.1103/PhysRevB.44.13319 ↗
3. Phys. Rev. B · 1996 · 54 · 438710.1103/PhysRevB.54.4387 ↗
4. J. Phys.: Condens. Matter · 2002 · 14 · 28510.1088/0953-8984/14/12/203 ↗
5. Rev. Mod. Phys. · 2004 · 76 · 32310.1103/RevModPhys.76.323 ↗
6. Science · 2001 · 294 · 148810.1126/science.1065389 ↗
7. Phys. Rev. Lett. · 2001 · 87 · 26640110.1103/PhysRevLett.87.266401 ↗
8. Phys. Rev. Lett. · 2004 · 93 · 15640310.1103/PhysRevLett.93.156403 ↗
9. Phys. Rev. Lett. · 2006 · 97 · 15640210.1103/PhysRevLett.97.156402 ↗
10. Phys. Rev. Lett. · 2006 · 96 · 09640110.1103/PhysRevLett.96.096401 ↗
11. Phys. Rev. Lett. · 2008 · 100 · 02640610.1103/PhysRevLett.100.026406 ↗
12. Phys. Rev. B · 1996 · 53 · 917510.1103/PhysRevB.53.9175 ↗
13. Appl. Phys. Lett. · 2002 · 80 · 82310.1063/1.1446995 ↗
14. Phys. Rev. Lett. · 2002 · 88 · 24720410.1103/PhysRevLett.88.247204 ↗
15. Phys. Rev. B · 2005 · 72 · 13440410.1103/PhysRevB.72.134404 ↗
16. J. Phys. D: Appl. Phys. · 2007 · 40 · 494310.1088/0022-3727/40/16/028 ↗
17. J. Phys. Chem. B · 2005 · 109 · 496510.1021/jp048748h ↗
18. Phys. Rev. B · 2002 · 65 · 10443010.1103/PhysRevB.65.104430 ↗
19. Phys. Rev. Lett. · 1997 · 79 · 516210.1103/PhysRevLett.79.5162 ↗
20. Phys. Rev. B · 2004 · 70 · 18440410.1103/PhysRevB.70.184404 ↗
21. Phys. Rev. B · 2012 · 85 · 13444710.1103/PhysRevB.85.134447 ↗