Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers
Source abstract
Abstract
This paper deals with the description and the application of an original photoluminescence (PL) imaging technique on thick, lighly n-type doped 4H-SiC epilayers for in-grown stacking fault (SF) identification. This technique, call “photoluminescence imaging spectroscopy” (PLIS), compares different PL imaging pictures in order to create a new picture which displays the location and an approximation of the maximum photoemission wavelength of SFs at room temperature. Five types of SF have been detected and identified by PLIS on two different wafers. The origin of SF type modification during the growth is also discussed in this work.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Kyoto University 1 Department of Electronic Science and Engineering, , Katsura, Nishikyo, Kyoto 615-8510, Japan
Central Research Institute of Electric Power Industry (CRIEPI) 2 , 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
References (27)
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