Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes
Source abstract
Abstract
In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are presented. The degradation effect of the built-in polarization field on the IQE of vertical light-emitting diodes is used to strengthening the Auger recombination coefficient in comparison to lateral light-emitting diodes. This result has been found consistent in both single-as well as multi-quantum well structures. In addition, when Auger recombination coefficient has been included in the analysis, vertical multiquantum well structure shows more degradation in the IQE in comparison to the lateral structures. The effect has been dominant in vertical MQW case.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology 1 , Swabi 23640, Pakistan
Faculty of Science and Technology, Meijo University 2 , 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
Department of Mathematics, COMSATS Institute of Information Technology 3 , 47040 Wah Cantt, Pakistan
College of Computer and Information Sciences, Prince Sultan University 4 , Riyadh 11586, Saudi Arabia
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