Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment
Source abstract
Abstract
In non-volatile memory technology, various attempts to overcome both technology and physical limits have led to development of neuromorphic devices like memristors. Moreover, multilevel resistance and the potential for enhanced memory capability has attracted much attention. Here, we report memristive characteristics and multilevel resistance in a hydrogen annealed ZnO nanowire device. We find that the memristive behavior including negative differential resistance arises from trapped electrons in an amorphous ZnO interfacial layer at the injection electrode that is formed following hydrogen annealing. Furthermore, we demonstrate that it is possible to control electrons trapping and detrapping by the controlled application of voltage pulses to establish a multilevel memory. These results could pave the way for multifunctional memory device technology such as the artificial neuromorphic system.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Trinity College Dublin 1 School of Chemistry and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), , Dublin 2, Ireland
Samsung Advanced Institute of Technology (SAIT) 2 Platform Technology Lab, , Samsung Electronics, 130 Samsung-ro, Suwon 16678, South Korea
Daegu Gyeongbuk Institute of Science and Technology (DGIST) 3 Energy Technology Research Group, , 333 Techno Jungang Daero, Hyeonpung-Myeon, Dalseong-Gun, Daegu-si 42988, South Korea
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