Resistive switching characteristics of Pt/TaOx/HfNx structure and its performance improvement
Source abstract
Abstract
The refractory transition metal nitride (TMN) film Hafnium nitride (HfNx) was successfully prepared on silicon-based substrates as bottom electrodes for resistive random access memory (RRAM) cells in Pt (top)/metal oxide/ HfNx (bottom) sandwich structure. The reproducible resistive switching (RS) characteristics of the memory cells were studied systematically for RRAM applications. The advantages of adopting HfNx instead of Pt as bottom electrode material were demonstrated, including the improvement of the low resistive state value, the RS endurance and the uniformity of RS parameters. The composition and chemical bonding states of the prepared HfNx was analyzed by X-ray photoelectron spectroscopy (XPS) technique. The nitrogen content in the HfNx and the Gibbs free energy of the corresponding metal oxide formation has great influences on the RS properties. The oxygen reservoir ability and diffusion barrier effect of the HfNx play a key role in the RS performance improvement of the RRAM devices.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Tongji University 1 Functional Materials Research Laboratory, , Shanghai 200092, China
Leshan Normal University 2 School of Physics and Electronic Engineering, , Leshan 614000, China
References (40)
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