journal article·2012-06-01Open access

Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition

F. de Moure-Flores, J. G. Quiñones-Galván, A. Guillén-Cervantes, J. Santoyo-Salazar, A. Hernández-Hernández, M. de la L. Olvera, M. Zapata-Torres, M. Meléndez-Lira

AIP Advances· Volume 2· Issue 2

Abstract

Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe:Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe:Cu films have p-type conductivity.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Advanced Semiconductor Detectors and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

CINVESTAV-IPN 1 Physics Department, , Apdo. Postal 14-740, México D.F. 07360, México

CINVESTAV-IPN 2 Electrical Engineering Department, Solid State Section, , Apdo. Postal 14-740, México D.F. 07360, México

CICATA-IPN 3 , Unidad Legaria, México D.F. 11500, México

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