Band alignments at Ga2O3 heterojunction interfaces with Si and Ge
Source abstract
Abstract
Amorphous Ga2O3 thin films were deposited on p-type (111) and (100) surfaces of silicon and (100) germanium by atomic layer deposition (ALD). X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignments at the interfaces using the Kraut Method. The valence band offsets were determined to be 3.49± 0.08 eV and 3.47± 0.08 eV with Si(111) and Si(100) respectively and 3.51eV± 0.08 eV with Ge(100). Inverse photoemission spectroscopy (IPES) was used to investigate the conduction band of a thick Ga2O3 film and the band gap of the film was determined to be 4.63±0.14 eV. The conduction band offsets were found to be 0.03 eV and 0.05eV with Si(111) and Si(100) respectively, and 0.45eV with Ge(100). The results indicate that the heterojunctions of Ga2O3 with Si(100), Si(111) and Ge(100) are all type I heterojunctions.
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Stephenson Institute for Renewable Energy, University of Liverpool 1 , Chadwick Building, Peach Street, Liverpool L69 7ZF, United Kingdom
Department of Physics, University of Liverpool 2 , Oliver Lodge Building, Oxford Street, Liverpool L69 7ZE, United Kingdom
Department of Electrical Engineering and Electronics, University of Liverpool 3 , Brownlow Hill, Liverpool L69 3GJ, United Kingdom
School of Engineering, University of Liverpool 4 , Brownlow Hill, Liverpool L69 3GH, United Kingdom
Department of Physics, Faculty of Science, Taif University 5 , Taif 888, Saudi Arabia
Funding
Engineering and Physical Sciences Research Council
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