The influence of Mg doping on the nucleation of self-induced GaN nanowires

GaN nanowires were grown without any catalyst by plasma-assisted molecular beam epitaxy. Under supply of Mg, nanowire nucleation is faster, the areal density of wires increases to a higher value, and nanowire coalescence is more pronounced than without Mg. During nanowire nucleation the Ga desorption was monitored in-situ by line-of-sight quadrupole mass spectrometry for various substrate temperatures. Nucleation energies of 4.0±0.3 eV and 3.2±0.3 eV without and with Mg supply were deduced, respectively. This effect has to be taken into account for the fabrication of nanowire devices and could be employed to tune the NW areal density.