journal article·2017-04-01Open access

Optimized thermoelectric performance of the n-type half-Heusler material TiNiSn by substitution and addition of Mn

Enkhtaivan Lkhagvasuren, Siham Ouardi, Gerhard H. Fecher, Gudrun Auffermann, Guido Kreiner, Walter Schnelle, Claudia Felser

AIP Advances· Volume 7· Issue 4

Abstract

Alloys based on the half-Heusler compound TiNiSn with the addition of Mn or with a substitution of Ti by Mn are investigated as high-temperature thermoelectric materials. In both materials an intrinsic phase separation is observed, similar to TiNiSn where Ti has been partially substituted by Hf, with increasing Mn concentration the phase separation drastically reduces the lattice thermal conductivity while the power factor is increased. The thermoelectric performance of the n-type conducting alloy can be optimized both by substitution of Ti by Mn as well as the addition of Mn.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Heusler alloys: electronic and magnetic properties · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Max-Planck-Institut für Chemische Physik fester Stoffe , Nöthnitzer Straße 40, 01187 Dresden, Germany

Funding

H2020 European Research Council

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