Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application
Source abstract
Abstract
The Ce and Mn co-doped BiFeO3 (BCFMO) thin films were synthesized on Pt/Ti/SiO2/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large ROFF/RON ratio (>80), long retention time (>105 s) and low programming voltages (<1.5 V). Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC) and Schottky emission were observed as the conduction mechanisms of the devices.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Ferroelectric and Piezoelectric Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Xiangtan University 1 Key Laboratory of Low Dimensional Materials & Application Technology of Ministry of Education, , Xiangtan, Hunan, 411105, China
Xiangtan University 2 The School of Mathematics and Computational Science, , Xiangtan, Hunan 411105, China
Funding
NNSFC
References (43)
Show source-provided references
1. Appl. Phys. Lett. · 2007 · 90 · 05210510.1063/1.2437688 ↗
2. Nano lett. · 2009 · 9 · 163610.1021/nl900006g ↗
3. Appl. Phys. Lett. · 2009 · 95 · 02210910.1063/1.3173813 ↗
4. Nature · 2008 · 453 · 8010.1038/nature06932 ↗
5. Appl. Phys. Lett. · 2007 · 91 · 06211110.1063/1.2760156 ↗
6. Appl. Phys. Lett. · 2008 · 92 · 01211710.1063/1.2832660 ↗
7. Appl. Phys. Lett. · 2004 · 85 · 407310.1063/1.1812580 ↗
8. IEEE Electron Device Lett. · 2007 · 26 · 35110.1109/LED.2005.848073 ↗
9. IEEE Electron Device Lett. · 2005 · 28 · 36610.1109/LED.2007.894652 ↗
10. Thin Solid Films · 2006 · 494 · 28710.1016/j.tsf.2005.08.153 ↗
11. Nat. Mater. · 2006 · 5 · 31210.1038/nmat1614 ↗
12. Adv. Mater. · 2010 · 22 · 403410.1002/adma.201000663 ↗
13. Semicond. Sci. Technol. · 2011 · 26 · 07501910.1088/0268-1242/26/7/075019 ↗
14. J. Phys. D: Appl. Phys. · 2009 · 42 · 05530610.1088/0022-3727/42/5/055306 ↗
15. Adv. Mater. · 2009 · 21 · 263210.1002/adma.200900375 ↗
16. Appl. Phys. Lett. · 2006 · 88 · 04290110.1063/1.2162860 ↗
17. Nat. Mater. · 2007 · 6 · 2110.1038/nmat1805 ↗
18. Ferroelectrics · 1997 · 204 · 2310.1080/00150199708222185 ↗
19. J. Appl. Phys. · 2010 · 108 · 004107
20. Appl. Phys. Lett. · 2005 · 86 · 22290310.1063/1.1941474 ↗
21. Appl. Phys. Lett. · 2006 · 89 · 24291410.1063/1.2404942 ↗
22. Nanotechnology · 2010 · 21 · 42520210.1088/0957-4484/21/42/425202 ↗
23. J. Phys. D: Appl. Phys. · 2011 · 44 · 41510410.1088/0022-3727/44/41/415104 ↗
24. Appl. Phys. Lett. · 2012 · 101 · 06290210.1063/1.4742897 ↗
25. Appl. Phys. Lett. · 2008 · 92 · 19290510.1063/1.2918130 ↗
26. J. Appl. Phys. · 2008 · 104 · 08410610.1063/1.3000478 ↗
27. Appl. Phys. Lett. · 2006 · 88 · 26290810.1063/1.2218819 ↗
28. J. Appl. Phys. · 2007 · 102 · 09410910.1063/1.2812594 ↗
29. J. Phys. D: Appl. Phys. · 2009 · 42 · 11540910.1088/0022-3727/42/11/115409 ↗
30. Appl. Phys. Lett. · 2006 · 88 · 04290710.1063/1.2168038 ↗
31. J. Magn. Magn. Mater. · 2008 · 320 · 54810.1016/j.jmmm.2007.07.016 ↗
32. J. Eur. Ceram. Soc. · 2007 · 27 · 439910.1016/j.jeurceramsoc.2007.02.163 ↗
33. Phys. Rev. B · 2007 · 75 · 04541110.1103/PhysRevB.75.045411 ↗
34. J. Phys. D: Appl. Phys. · 2006 · 39 · 508010.1088/0022-3727/39/23/027 ↗
35. Nanotechnology · 2011 · 22 · 25401010.1088/0957-4484/22/25/254010 ↗
36. Appl. Phys. Lett. · 2002 · 80 · 65510.1063/1.1436527 ↗
37. Adv. Mater. · 2007 · 19 · 223210.1002/adma.200602915 ↗
38. Appl. Phys. Lett. · 2008 · 92 · 18350710.1063/1.2924304 ↗
39. Microelectronic Engineering · 2012 · 93 · 3510.1016/j.mee.2011.12.003 ↗
40. Science · 2003 · 299 · 171910.1126/science.1080615 ↗
41. Rep. Prog. Phys. · 2012 · 75 · 07650210.1088/0034-4885/75/7/076502 ↗
42. Thin Solid Films · 2010 · 519 · 49910.1016/j.tsf.2010.08.004 ↗
43. Mater. Today · 2008 · 11 · 2810.1016/S1369-7021(08)70119-6 ↗