DataVXAIP AdvancesPaper
journal article·2019-01-01Open access

O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy

Bin Zhang, Wen-Qi Wei, Jian-Huan Wang, Hai-Ling Wang, Zhuang Zhao, Lei Liu, Hui Cong, Qi Feng, Huiyun Liu, Ting Wang, Jian-Jun Zhang

AIP Advances· Volume 9· Issue 1
Publisher pageOpen full text
Source abstract

Abstract

Recent years, the emergence of hyper-scale data centers boosted the research field of integrated silicon photonics. One of the major challenges for compact photonic integrated circuits is silicon based lasers. In this paper, we demonstrate optically pumped InAs/GaAs quantum-dot micropillar laser on exact Si (001) by (111)-faceted-sawtooth Si hollow structure via IV/III-V hybrid epitaxy. The lasing threshold of InAs/GaAs quantum-dot micropillar is as low as 20 μW with the pillar diameter of 15 μm. Moreover, the micropillar laser is capable of operating at maximum temperature up to 100 °C.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Photonic and Optical Devices · Neural Networks and Reservoir Computing · Photonic Crystals and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences 1 , Beijing 100190, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 2 , Beijing 100049, China

School of Physical Sciences, University of Chinese Academy of Sciences 3 , Beijing 100190, China

Optical and Microwave Technology Research Department, Huawei Technologies Co., Ltd. 4 , Shenzhen 518129, China

Department of Electronic and Electrical Engineering, University College London 5 , London WC1E 7JE, UK

Funding

Key Research Program of Frontier Sciences, CAS · National Key Research and Development Program of China · National Natural Science Foundation of China · Youth Innovation Promotion Association of the Chinese Academy of Sciences

References (28)

Show source-provided references
1. All-optical control of light on a silicon chip10.1038/nature02921 ↗
2. Silicon photonics: energy-efficient communication10.1038/nphoton.2011.68 ↗
3. The commercialization of silicon photonics10.1038/nphoton.2014.175 ↗
4. Recent progress in lasers on silicon10.1038/nphoton.2010.167 ↗
5. High-output-power, single wavelength silicon hybrid laser using precise flip-chip bonding technology10.1364/oe.20.028057 ↗
6. On-chip light sources for silicon photonics10.1038/lsa.2015.131 ↗
7. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates10.1364/oe.19.011381 ↗
8. 1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100 °C10.1049/el.2014.2414 ↗
9. Electrically pumped continuous-wave III-V quantum dot lasers on silicon10.1038/nphoton.2016.21 ↗
10. All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)10.1364/oe.26.011568 ↗
11. Direct modulation of 1.3 μm quantum dot lasers on silicon at 60 °C10.1364/oe.24.018428 ↗
12. Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon10.1364/ol.41.001664 ↗
13. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si10.1364/oe.25.003927 ↗
14. Quantum dot lasers on silicon substrate for silicon photonic integration and their prospect10.7498/aps.64.204209 ↗
15. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate10.1038/nphoton.2011.120 ↗
16. High-performance ALGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator10.1364/prj.6.000290 ↗
17. Toward the III-V/Si co-tegration by controlling the biatomic steps on hydrogenated Si (001)10.1063/1.4972394 ↗
18. O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si10.1364/oe.25.026853 ↗
19. Low threading dislocation density GaAs growth on on-axis GaP/Si (001)10.1063/1.5001360 ↗
20. Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si10.1364/ol.42.000338 ↗
21. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers10.1364/oe.22.011528 ↗
22. MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon10.1116/1.4864148 ↗
23. InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μm band10.1063/1.4929441 ↗
24. Continuous-wave optically pumped 1.55 μm InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on silicon10.1021/acsphotonics.6b00731 ↗
25. InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm10.1063/1.5043169 ↗
26. Photon statistics of semiconductor microcavity lasers10.1103/physrevlett.98.043906 ↗
27. AlAs/GaAs micropillar cavities with quality factors exceeding 150.00010.1063/1.2749862 ↗
28. Spontaneous emission factor and its scaling in vertical cavity surface emitting lasers10.1063/1.110932 ↗